Publication detail

Amplification Enhancement of Gunn Effect Based Active Transmission Lines

POKORNÝ, M. RAIDA, Z.

Original Title

Amplification Enhancement of Gunn Effect Based Active Transmission Lines

Type

conference paper

Language

English

Original Abstract

In this paper, we concentrate on the design and analysis of the active semiconductor traveling wave devices based on the Gunn effect in bulk GaAs semiconductor. The complex model of active device based on the macroscopic approximations of electron dynamics is analyzed by finite element method using COMSOL Multiphysics and the design issues to achieve an efficient amplification and device stability are formulated and discussed. Upon simulation results of the convectional active coplanar waveguide design based on the experimental work in [1],we propose more efficient solution.

Keywords

Gunn effect, Active transmission line, GaAs, COMSOL

Authors

POKORNÝ, M.; RAIDA, Z.

Released

23. 5. 2011

Publisher

Aalto Univerzity of Finland

Location

Finland

Pages from

1

Pages to

4

Pages count

4

BibTex

@inproceedings{BUT73083,
  author="Michal {Pokorný} and Zbyněk {Raida}",
  title="Amplification Enhancement of Gunn Effect Based Active Transmission Lines",
  booktitle="Millimetre Wave Days Proceedings",
  year="2011",
  pages="1--4",
  publisher="Aalto Univerzity of Finland",
  address="Finland"
}