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DALLAEVA, D. TOMÁNEK, P. RAMAZANOV, S.
Original Title
Scanning tunneling microscopy of high-resistance SiC-AlN solid solutions
Type
conference paper
Language
English
Original Abstract
The purpose of the paper is a study of films morphology of silicon carbide and aluminum nitride solid solution. The films were obtained by magnetron sputtering. The described method allows solving a measure foreground task of electronics at nanometer and atomic levels.
Keywords
Silicon carbide, Aluminum nitride, Atomic force microscopy, Scanning tunneling microscopy, Thin film
Authors
DALLAEVA, D.; TOMÁNEK, P.; RAMAZANOV, S.
RIV year
2012
Released
11. 10. 2012
Publisher
Vysoke uceni technicke v Brne, Fakulta elektrotechniky a komunikacnich technologii, Ustav fyziky
Location
Brno
ISBN
978-80-214-4594-9
Book
New trends in physics 2012
Pages from
149
Pages to
152
Pages count
4
BibTex
@inproceedings{BUT94390, author="Dinara {Sobola} and Pavel {Tománek} and Shihgasan {Ramazanov}", title="Scanning tunneling microscopy of high-resistance SiC-AlN solid solutions", booktitle="New trends in physics 2012", year="2012", pages="149--152", publisher="Vysoke uceni technicke v Brne, Fakulta elektrotechniky a komunikacnich technologii, Ustav fyziky", address="Brno", isbn="978-80-214-4594-9" }