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DALLAEVA, D. KOROSTYLEV, E. BILALOV, B. TOMÁNEK, P.
Original Title
Scanning proximal microscopy study of the thin layers of silicon carbide aluminum nitride solid solution manufactured by fast sublimation epitaxy
Type
journal article - other
Language
English
Original Abstract
The objective of the study is a growth of SiC/(SiC)1-x(AlN)x structures by fast sublimation epitaxy of the polycrystalline source of (SiC)1-x(AlN)x and their characterisation by proximal scanning electron microscopy and atomic force microscopy. For that purpose optimal conditions of sublimation process have been defined. Manufactured structures could be used as substrates for wide-band-gap semiconductor devices on the basis of nitrides, including gallium nitride, aluminum nitride and their alloys, as well as for the production of transistors with high mobility of electrons and also for creation of blue and ultraviolet light emitters (light-emitted diodes and laser diodes). The result of analysis shows that increasing of the growth temperature up to 2300 K llows carry out sublimation epitaxy of thin layers of aluminum nitride and its solid solution.
Keywords
CdS, AlN, thin layer, proximal microscopy
Authors
DALLAEVA, D.; KOROSTYLEV, E.; BILALOV, B.; TOMÁNEK, P.
RIV year
2013
Released
3. 5. 2013
Publisher
EDP Sciences
Location
Les Ullis, France
ISBN
2100-014X
Periodical
EPJ Web of Conferences
Year of study
48
Number
1
State
French Republic
Pages from
Pages to
4
Pages count
URL
https://www.epj-conferences.org/articles/epjconf/abs/2013/09/epjconf_OAM2012_00002/epjconf_OAM2012_00002.html
Full text in the Digital Library
http://hdl.handle.net/11012/193660
BibTex
@article{BUT99853, author="Dinara {Sobola} and Evgenij {Korostylev} and Bilal {Bilalov} and Pavel {Tománek}", title="Scanning proximal microscopy study of the thin layers of silicon carbide aluminum nitride solid solution manufactured by fast sublimation epitaxy", journal="EPJ Web of Conferences", year="2013", volume="48", number="1", pages="1--4", doi="10.1051/epjconf/20134800002", issn="2100-014X", url="https://www.epj-conferences.org/articles/epjconf/abs/2013/09/epjconf_OAM2012_00002/epjconf_OAM2012_00002.html" }