Course detail

Modern Microelectronic Devices

FEKT-MPC-MPRAcad. year: 2025/2026

The subject expands and deepens knowledge about semiconductor components from the subject of the bachelor's degree. The aim is to acquaint students with selected parameters and properties of selected types of electronic components in relation to the basic physical principles of components. Students will be introduced to the properties of modern semiconductor components (JFET, MOSFET and IGBT) based on Si, SiC and GaN, including their use in electrical engineering circuits. The goal of practical jobs is to deepen students' theoretical knowledge by experimentally verifying the properties of selected modern semiconductor components using automated measurement tools (LabVIEW) and simulations.

Language of instruction

Czech

Number of ECTS credits

Mode of study

Not applicable.

Guarantor

prof. Ing. Jan Leuchter, Ph.D.

Department

Department of Microelectronics (UMEL)

Entry knowledge

Basic knowledge of physics, mathematics and electrical circuits is required.

Work in the laboratory is subject to a valid qualification of "instructed person", which students must obtain before starting classes. Information on this qualification can be found in the Dean's Directive Acquainting Students with Safety Regulations.

Rules for evaluation and completion of the course

Credit conditions: completion of measured tasks and handing in prepared protocols in the required quality.

Exam conditions: proof of knowledge of the subject in the written and oral parts of the exam.

Point evaluation (max. 100 points): max. 30 points for work during the semester; max. 70 points per exam. The final exam consists of two parts (written and oral) and is evaluated for a total of 70 points.

Aims

The goal of the master's extension course is to expand and deepen knowledge about semiconductor components from the bachelor's degree course. The aim is to emphasize the relationships between the physical principle of the component and the actual realization of the component. The subject should emphasize the connections and relationships between the properties of the starting semiconductor material and the properties of the semiconductor component. In the exercises, students will learn to interpret basic quantities in semiconductor materials and structures. The goal of practical jobs is to deepen knowledge by experimental verification of selected semiconductor components, especially by measuring their characteristics and parameters.

Study aids

Prerequisites and corequisites

Not applicable.

Basic literature

HORÁK M.: Mikroelektronické prvky a struktury, SKRIPTUM VUT 2010 (CS)
KHANNA, Kumar V. Insulated Gate Bipolar Transistor IGBT Theory and Design (EN)
RAZAVI, B. Fundamentals of Microelectronics (EN)

Type of course unit

Lecture

26 hod., optionally

Teacher / Lecturer

prof. Ing. Jan Leuchter, Ph.D.

Syllabus

1. Development and use of microelectronics in practice (history, present and new trends).

2. Overview of the physics of semiconductors - basic properties.

3. Fundamentals of quantum electronics.

4. Energy band structure of semiconductors.

5. PN junction and volt-ampere characteristic of P-N junction, capacity of P-N junction.

6. Metal-semiconductor contact, Schottky contact, volt-ampere characteristic of Schottky contact, ohmic contact, diodes.

7. Semiconductor diodes.

8. Applied electronics in switching power supplies - use of REC, SBD, FRD and SW diodes with a focus on losses and efficiency. Trends in the use of new SiC and GaN technologies in practice (right).

9. Heterojunctions.

10. Bipolar Junction Transistors.

11. Structure of MIS and its properties.

12. MOSFET transistor, IGBT.

13. Modern types of FET transistors or excursions in ONSEMI.

Fundamentals seminar

13 hod., optionally

Teacher / Lecturer

prof. Ing. Jan Leuchter, Ph.D.

Syllabus

1. V-A characteristics of semiconductor diodes - measurement (static and dynamic mode).

2. Computer modeling of semiconductor diodes using SPICE models (REC, SBD, FRD and SW) focusing on VF and trr parameters.

3. Building an automated workplace for measuring semiconductor components in the LabVIEW environment.

4. Building an automated workplace for measuring semiconductor components in the LabVIEW environment.

5. Automated measurement of semiconductor diodes (REC, SBD, FRD and SW) and comparison of the results with the modeling results of the SPICE models from exercise 2.

6. Measurements on SiC SBD elements. Determining the parameters of a semiconductor diode.

7. Input and output characteristics of semiconductor elements (BT, MOSFET). Principle of operation of semiconductor elements in switching mode.

8. Measurement of static parameters of power MOSFET and SiC MOSFET and their behavior in switching mode.

9. Computer modeling of semiconductor components (MOSFET, SiC MOSFET and IGBT) using SPICE models.

10. Automated measurement of semiconductor components (BT, MOSFET, SiC MOSFET and IGBT) in the LabVIEW environment.

11. Automated measurement of semiconductor components (BT, MOSFET, SiC MOSFET and IGBT) in the LabVIEW environment.

12. Determination of the parameters of semiconductor elements (BT, MOSFET and IGBT) from the measured volt-ampere characteristics and comparison with the component catalog sheet and the SPICE model.

13. Measurement of dynamic properties of SiC MOSFETs and IGBTs with excitation circuits or Excursion in ON-SEMI.

Exercise in computer lab

26 hod., compulsory