Course detail

Selected problems from power electronics and electrical drives

FEKT-DKC-VE1Acad. year: 2025/2026

Ringning problems of fast switching semiconductors MOS-FET, SiC MOS-FET and GaN MOS-FET, circuit realization of gate-drivers for these transistors, snubber circuits for the turn-off process (lossy and lossless), parasitic effects in power circuits of DC/DC converters with fast switching semiconductors - influence of the transformer leakage, transformer parasitic capacitance and transistor parasitic capacitance C-E, forward and reverse recovery of diodes and their ellimination. Skin-effect and proximity effect in the windings, problems of geometrical design of the power circuit and gate-driver, problems of EMC.

Language of instruction

Czech

Number of ECTS credits

4

Mode of study

Not applicable.

Guarantor

doc. Ing. Pavel Vorel, Ph.D.

Department

Department of Power Electrical and Electronic Engineering (UVEE)

Entry knowledge

1. Basic knowledge of power circuits of DC/DC and DC/AC converters.
2. Basic knowledge of turn-on and turn-off processes of a switching transistor.
3. Basic knowledge of gate-driver problems.
4. Basic knowledge of pulse transformers and choke-inductor design.

Rules for evaluation and completion of the course

Oral final exam - max. 70 points
Study results are verified regularly during the semester based on a discussion over the degree of understanding the solved problems - max. 30 points.

Aims

The goal of the course is to improve the knowledge in the field of power pulse converters, non-traditional power circuits, application of modern switching semiconductors and corresponding parasitic effects.
The graduate understands the ringing effect and knows the mechanisms of its appearing.
The graduate is able to eliminate the ringing by the construction of power circuit and gate-driver.
The graduate can construct power-stages of gate-drivers for SiC MOS-FET and GaN MOS-FET transistors.
The graduate knows the snubber circuits.
The graduate understands selected resonant and quasi-resonant converters in detail.
The graduate is able to design the pulse transforemsr and a choke inductor taking into account the problems of skin-effect and proximity effects.
The graduate is able to construct power circuits with extremely fast semiconductors and is able to elliminate the forced parasitic effects appearing in these cases.
The graduate can correctly read the distorted measurement results of power circuits.
The graduate can design EMC filters and is able to construct control circuits with high immunity to the interference of power circuits.

Study aids

Not applicable.

Prerequisites and corequisites

Not applicable.

Basic literature

Bose, B.K.: Power electronics and AC Drives. Prentice Hall 1986 (CS)
Patočka, M.: Magnetické jevy a obvody ve výkonové elektronice, měřicí technice a silnoproudé elektrotechnice. V Brně: VUTIUM, 2011. ISBN 978-80-214-4003-6. (CS)
Patočka, M.: Vybrané statě z výkonové elektroniky, svazek 1, skriptum FEKT VUT Brno (CS)
Patočka, M.: Vybrané statě z výkonové elektroniky, svazek 2, skriptum FEKT VUT Brno (CS)

Recommended reading

Not applicable.

Classification of course in study plans

  • Programme DKC-EKT Doctoral 0 year of study, winter semester, compulsory-optional
  • Programme DKC-KAM Doctoral 0 year of study, winter semester, compulsory-optional
  • Programme DKC-MET Doctoral 0 year of study, winter semester, compulsory-optional
  • Programme DKC-SEE Doctoral 0 year of study, winter semester, compulsory-optional
  • Programme DKC-TEE Doctoral 0 year of study, winter semester, compulsory-optional
  • Programme DKC-TLI Doctoral 0 year of study, winter semester, compulsory-optional

Type of course unit

 

Guided consultation

39 hod., optionally

Teacher / Lecturer

doc. Ing. Pavel Vorel, Ph.D.

Syllabus

Témata jednotlivých seminářů jsou uvedena v e-learningu portálu VUT