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Original title in Czech: Fyzikální elektronika a nanotechnologieFEKTAbbreviation: PP-FENAcad. year: 2011/2012
Programme: Electrical Engineering and Communication
Length of Study:
Profile
The objective of the study is to provide PhD education to MSc graduates in all partial fields and to create a cross-disciplinary overview of the present development, to develop theoretical foundations in the selected research area, to master the methods of scientific, to develop their creative abilities and to use them for the solution of research problems. This all should lead to a dissertation thesis, which will provide an original a significant contribution to the research status in the field of interest.
Key learning outcomes
Graduates of this program will acquire cross-disciplinary knowledge of and experience in technical and physical subjects on a high-quality theoretical level. Graduates are for their later independent research and development work equipped with the knowledge and experience from, in particular, physics of semiconductors, quantum electronics and mathematical modeling and will be able to independently solve problems associated with nanotechnologies. Potential job careers: research worker in basic or applied research and in the introduction, implementation and application of new prospective and economically beneficial procedures and processes in the field of electronics, electrical engineering, non-destructive testing and reliability and material analysis.
Occupational profiles of graduates with examples
Graduates of this program will acquire cross-disciplinary knowledge of and experience in technical and physical subjects on a high-quality theoretical level. Graduates are for their later independent research and development work equipped with the knowledge and experience from, in particular, physics of semiconductors, quantum electronics and mathematical modeling and will be able to independently solve problems associated with nanotechnologies. Potential job careers: research worker in basic or applied research and in the introduction, implementation and application of new prospective and economically beneficial procedures and processes in the field of electronics, electrical engineering, non-destructive testing and reliability and material analysis
Guarantor
prof. RNDr. Pavel Tománek, CSc.
Issued topics of Doctoral Study Program
An important role in many plasma processing devices plays the radiative heat transport. The experimental investigation is very difficult, therefore, mathematical modeling is of great imporatnce. The knowledge of absorption properties of the plasma is necessary for succesfulI theoretical modeling. The aim of this disertation work is to collect atomic and molecular data which will serve as input data for calculation of absroption coefficients of selected plasmas. It concerns searching of data in available web databases, their computer processing, and creation of own databases in the form of input files for further calculations.
Tutor: Bartlová Milada, doc. RNDr., Ph.D.
The main problem during semiconductor materials and devices defects diagnostics is to find their basic parameters. A lot of methods exist for this purpose but they often give different results. The goal of the work will be research of advanced modern methods for important parameters finding for example impact ionization coefficients or impurities concentration profiles in PN junctions and others. Obtained results will be used for these parameters measuring for some materials (Si, GaAsP) and devices (silicon solar cells, semiconductor diodes). The Ph.D. student will cooperate on the research project GAČR P102/10/2013 Fluctuation processes in PN junctions of solar cells.
Tutor: Koktavý Pavel, prof. Ing., CSc. Ph.D.
Study of energy spectra of nanostructures and nanodevices such as QD and QW and to gain new pieces of knowledge by solving the Schroedinger equation with suitable boundary conditions. The aim is to summarize existing computer procedures and submitt their refined versions. Application of Matlab PDE toolbox and FEM method with help of Comsol Multiphysics is assumed.
Tutor: Hruška Pavel, doc. RNDr., CSc.
A large number of inhomogeneities and defects appears in solar cells during their manufacturing due to their large surface area. They reduce quality of cells and cause decrease of their efficiency, reliability and service life during operation in solar panels. The aim of the work will be diagnostics of the defects by monitoring of their activities during electrical or optical excitation. The study will be mainly focused on the characteristics of radiation emitted in the forward and reverse direction during electrical excitation (spectroscopy in the visible region, infrared spectroscopy), current fluctuations during voltage loading, current response to laser local irradiation (LBIC) and other characteristics. The methodology of silicon solar cells diagnostics will be proposed and verified on the basis of these methods. The Ph.D. student will cooperate on the research project GAČR P102/10/2013 Fluctuation processes in PN junctions of solar cells.
The present level of environmental protection as well as current efforts to replace crude oil products by agricultural products exert a strong pressure upon insulating oils used in electrical engineering. The main requirement is improved biodegradability while preserving the standard properties as high breakdown strength, high resistivity, low permittivity, long-term stability as well as low price. These requirements can be met by vegetable oils (e.g. line-seed or rapeseed oils), mostly methyl-esters or ethyl-esters, sometimes also triglycerides or their synthetically manufactured relatives. In some cases, a suitable substitute may also be motor and industrial oils. The subject of the study will be dielectric properties of vegetable oils intended for the use in power engineering. Studies should be focused to the impact of a particular chemical structure onto their electrical properties and to their applicability at low temperatures. The work on this topic will require experimental work in sample preparation and design and theoretical studies and measurement of electrical properties of analyzed material systems. What is available: measurement equipment for the frequency range 10 - 10E9 Hz and the helium cryostat for the temperature range 10 - 500 K.
Tutor: Liedermann Karel, doc. Ing., CSc.
The objectives of the work consist in a formulation of physical principle model of electro-ultrasonic spectroscopy and in an analysis of correlation between results of electro-ultrasonic spectroscopy and electromagnetic emission. Special attention will be paid to experimental study of rock samples.
Tutor: Sedlák Petr, doc. Ing., Ph.D.
In NDT, lasers are used to generate and detect ultrasonic waves, which is used to measure materials thickness, detect flaws and materials characterization. The thesis is oriented on electronic components, where special attention is given to study of partial discharges.
Study of structural and optical models of tissues with single and multiple scattering with ordered and randomly distributed scatterers. Study of polarization states of forward and backward scattered light.
Tutor: Tománek Pavel, prof. RNDr., CSc.
Exploatation of electronic noise for the estimation of passive components quality and reliability. The assesment of the correlation between electronic noise level and the results of accelerating ageing tests.
Tutor: Sedláková Vlasta, doc. Ing., Ph.D.
Use of Scanning probe microscopy to non-destructive diagnostics and local characterization of optoelectronic devices. The work contains both theoretical and experimental approaches.
Quartz crystal microbalance (QCM) belongs to a group of high sensitive sensors for detection of chemical substances dissolved in gas or liquid. This type of sensor is applied routinely by biologists and chemists to obtain information about chemical processes. The core of QCM is the AT-cut quartz crystal that oscillates at a resonant frequency which is determined by mass and geometry of the crystal as well as several other factors (temperature, applied voltage etc.). The quartz electrodes are covered by sorption layers with affinity to the molecules of the detected matter. Sorbed matter (molecules of the detected mass) represents mass increment and the change of the viscoelastic properties of the layer, which leads to the change of resonant frequency. The aims of the work are two-fold: to study theoretically and experimentally fluctuation processes in these sensors and to optimize a design of QCM sensors in order to get a maximal sensitivity.
The thesis focuses on resistive gas sensor and fluctuation processes, which occur as a result of molecule adsorption of detected matter. The aim is to analyze dependencies of these fluctuations on concentrations of detected substances. This analysis can improve selectivity and sensitivity of resistive gas sensors and can optimize a design of gas sensors in order to get a maximal sensitivity.
The objective of this research project is the investigation of the properties and behavior of surface oxide layers on diamond and noble metals in tho course of electron emission. Emission stability, reproducibility of current-voltage characteristics, noise characteristics as well as emission divergence will be studied. Methodology consists in an experimental study of measurable quantities, as the noise voltage or current and their spectral density dependence on vacuum, temperature and electric field strength.
Tutor: Grmela Lubomír, prof. Ing., CSc.
Radiation energy transfer influences significantly physical processes occuring in the plasma, it plays important role in many devices in plasma processing devices. Electric arc plasmas are utilized in number of industrial applications, e.g. in plasma metallurgy, waste treatment, plasma cutting, welding or spraying. The goal of the work is to solve the equation of radiation transfer by means of the approximate method of discrete ordinates (SN-approximation), to compare the obtained results of radiation energy and radiation flux for selected kinds of plasmas with known results obtained by other approximate methods (method of partial characteristics, diffusion approximation), to discuss availability of different approximate methods.
The aim of this project is to determine parameters of traps in insulation layer of submicron MOSFETs by analysis of its noise characteristics, mainly RTS (random telegraph signal) noise. Experimental work is based on measurement of temperature dependence of noise using helium cryostat and study of amplitude and mean time of capture and emission as a function of electric field intensity and charge carrier concentration in channel. These results will be used to improve generation-recombination model of noise origin and localization of traps.
Tutor: Pavelka Jan, doc. Mgr., CSc. Ph.D.
Cracks creation in mechanical loaded solids is accompanied by origin of electromagnetic (EME) and acoustic (AE) signals. These signals may be used for study of cracks formation evolution, their characteristics finding and their localization. EME and AE methods are usable in electrical engineering, mechanical engineering, civil engineering or in geophysics. The goal will be determination of cracks primary parameters and their localization in concrete, granite and in modern composite materials for structural applications. Analysis of EME and AE signals origin and propagation will be performed in these materials and models will be suggested. The methodology for determination of selected primary parameters and cracks localization will be suggested and verified. The Ph.D. student will cooperate on the research project GAČR P104/11/0734 Utilization of electromagnetic and acoustic emission in research of advanced composite materials for structural applications.
Decreasing the dimensions in integrated circuits (currently 32 nm) brings about an increase of interconnect capacitance and thus the reduction of the signal propagation speed. The limiting factor for a further improvement of electronic device performance thus become not the properties of semiconductor devices themselves but rather interconnect delays and, hence, too high magnitudes of parasitic capacitances. One of the options for the reduction of interconnect capacitances is the reduction of the permittivity (dielectric constant, k) of thin-layer insulating layers (capacitance is directly proportional to permitivity). Two major routes are available: replacement of polar Si-O bonds with less polar Si-F or Si-C bonds or raising the porosity, i.e. intentional introduction of air voids. The newly developed low-k materials must, however, not limit the currently used silicon technologies and must be able to pass all manufacturing steps including temperatures up to about 1100°C. The work on this topic will require experimental work in sample preparation and design, studies of the theory of low-k dielectrics and the measurement of electrical properties of developed material systems. What is available: measurement equipment for the frequency range 10 - 10E9 Hz and the helium cryostat for the temperature range 10 - 500 K.
Materials exhibiting high permittivity (dielectric constant, k) are needed for new applications, particularly in integrated circuits (ICs) using the 32 nm technology and in capacitors. In capacitors, high-k dielectrics are used in order to attain higher energy densities in capacitors and thus to reduce the size of capacitors themselves. In ICs manufacturing, the present drive toward smaller dimensions results in the thinning of insulating layers, accompanied by an unwanted increase of leakage currents. In order to prevent this effect, higher gate thicknesses are desired which, however, because of the necessity to keep the capacitance constant, should exhibit higher dielectric constant than the pure SiO2. Materials for ICs should be used within the current silicon technologies and, therefore, they must be able to sustain all manufacturing steps without being damaged. Suitable dielectrics are mostly transition metal oxides, e.g. ZrO2, HfO2, Al2O3, Y2O3, La2O3, Ta2O5 etc. Moreover, all materials considered must be thermodynamically stable on silicon for a long time. In case of dielectrics for capacitors, the use of multilayer ceramic chip capacitors again necessitates the use of material that can withstand sintering temperatures. The work on this topic will require experimental work in sample preparation and design, studies of the theory of high -k dielectrics and the measurement of electrical properties of developed material systems. What is available: measurement equipment for the frequency range 10 - 10E9 Hz and the helium cryostat for the temperature range 10 - 500 K.