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PTÁČEK, K.
Originální název
An Accurate DC and RF Modeling of Nonlinear Spiral Divider in High Voltage MOSFET Transistor
Typ
článek ve sborníku ve WoS nebo Scopus
Jazyk
angličtina
Originální abstrakt
This paper presents an accurate DC and RF modeling of nonlinear spiral high resistance polysilicon divider. The spiral divider is a sensing part of the high voltage start-up MOSFET transistor operating up to 700 V. The strong electric field in low doped drain drift area located under the low doped polysilicon spiral divider results in parasitic effects that have a significant influence on DC and RF device characteristics and makes divider ratio voltage and frequency dependent. This paper demonstrates the strucyure of a proposed macro model, implemented voltage and frequency dependency, and physical explanation of these phenomena. Finally, the comparison of measured data vs. simulation is presented in order to confirm the model validity.
Klíčová slova
MOSFET; modeling; spiral polysilicon voltage divider; high-voltage devices
Autoři
Rok RIV
2012
Vydáno
29. 10. 2012
Nakladatel
IEEE
Místo
Piscataway
ISBN
978-1-4673-2475-5
Kniha
2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology
Strany od
1
Strany do
3
Strany počet
BibTex
@inproceedings{BUT101652, author="Karel {Ptáček}", title="An Accurate DC and RF Modeling of Nonlinear Spiral Divider in High Voltage MOSFET Transistor", booktitle="2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology", year="2012", pages="1--3", publisher="IEEE", address="Piscataway", isbn="978-1-4673-2475-5" }