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HÉGR, O. ČECH, P. BAŘINKA, R. SOBOTA, J. KUSKO, M. KADLEC, S.
Originální název
Comparison of Aluminum Oxide Layers Deposited by PECVD and Pulsed Magnetron Sputtering for Dielectric Rear Side Passivation of Crystalline Silicon Solar Cells
Typ
článek ve sborníku ve WoS nebo Scopus
Jazyk
angličtina
Originální abstrakt
The aim of our work is to test other alternative technologies available in the Solartec's research laboratory. There are a standard PECVD technology and a unique OKS („Otto Klobe und Sohn“) sputtering system, specially developed for photovoltaic applications. Sputtering system OKS is based on a batch process for 36 of 5“ Si substrates, where very good homogeneity of dielectric layers (2%) is achieved. OKS sputtering equipment was specially developed for the pilot plant in order to create a viable alternative to existing PECVD and opportunities for a wider use of the system, especially for the formation of multilayer dielectric films suitable for colored solar cells.
Klíčová slova
solar cells, dielectric, passivation layer, aluminum oxide, reactive sputtering, PECVD
Autoři
HÉGR, O.; ČECH, P.; BAŘINKA, R.; SOBOTA, J.; KUSKO, M.; KADLEC, S.
Rok RIV
2013
Vydáno
1. 10. 2013
Nakladatel
WIP Wirtschaft und Infrastruktur GmbH & Co Planungs KG
Místo
München, Germany
ISBN
3-936338-33-7
Kniha
Proceedings of 28th European Photovoltaic Solar Energy Conference and Exhibition
Číslo edice
1
Strany od
2047
Strany do
2049
Strany počet
3
BibTex
@inproceedings{BUT103999, author="Ondřej {Hégr} and Pavel {Čech} and Radim {Bařinka} and Jaroslav {Sobota} and Martin {Kusko} and Stanislav {Kadlec}", title="Comparison of Aluminum Oxide Layers Deposited by PECVD and Pulsed Magnetron Sputtering for Dielectric Rear Side Passivation of Crystalline Silicon Solar Cells", booktitle="Proceedings of 28th European Photovoltaic Solar Energy Conference and Exhibition", year="2013", number="1", pages="2047--2049", publisher="WIP Wirtschaft und Infrastruktur GmbH & Co Planungs KG", address="München, Germany", doi="10.4229/28thEUPVSEC2013-2DV.4.21", isbn="3-936338-33-7" }