Type-I and Type-II Confinement in Quantum Dots: Excitonic Fine Structure

článek v časopise ve Web of Science, Jimp

angličtina

We have theoretically studied type-I and type-II confinement in InAs quantum dots with GaAs1−ySby capping layer. The character of the confinement can be adjusted by the Sb content. We have found that upon the transition from type-I to type-II confinement the hole wave functions change the topology from a compact shape to a twosegment shape, resulting in the complex changes in the exciton fine structure splitting with zero values at particular compositions. Additionally, a high exciton radiative recombination probability is preserved even in type-II. This allows to design strongly luminescent quantum dots with naturally low fine structure splitting, which could serve as sources of entangled photon pairs for quantum communication.

Quantum Dots; Fine structure; GaAs; Excitons

KŘÁPEK, V.; KLENOVSKÝ, P.; ŠIKOLA, T.

15. 1. 2016

0587-4246

ACTA PHYSICA POLONICA A

129

1A

Polská republika

A66

A69

4

http://przyrbwn.icm.edu.pl/APP/PDF/129/a129z1ap13.pdf