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ŠIKULA, J., PAVELKA, J., SEDLÁKOVÁ, V., TACANO, M., HASHIGUCHI, S., TOITA, M.
Originální název
RTS in submicron MOSFETs and quantum dots
Typ
článek ve sborníku ve WoS nebo Scopus
Jazyk
angličtina
Originální abstrakt
In the present paper, emphasis is laid on those RTS showing a capture process, which deviates from the standard Schockley-Read-Hall kinetics. A modified two-step approach is proposed. In this case the charge carrier quantum transitions represent a primary process X(t), which involves two or three quantum states.
Klíčová slova v angličtině
RTS noise, Noise Spectral Density, MOSFET, Quantum Dots, Capture Time Constant, Emission Time Constant
Autoři
Rok RIV
2004
Vydáno
1. 1. 2004
Nakladatel
The Society of Photo-Optical Instrumentation Engineers
Místo
United States of America
ISBN
0-8194-5394-3
Kniha
Proceedings of SPIE - Noise and Information in Nanoelectronics, Sensors, and Standards II
Strany od
64
Strany do
73
Strany počet
10
BibTex
@inproceedings{BUT12660, author="Josef {Šikula} and Jan {Pavelka} and Vlasta {Sedláková} and Munecazu {Tacano} and Sumihisa {Hashiguchi} and Masato {Toita}", title="RTS in submicron MOSFETs and quantum dots", booktitle="Proceedings of SPIE - Noise and Information in Nanoelectronics, Sensors, and Standards II", year="2004", pages="10", publisher="The Society of Photo-Optical Instrumentation Engineers", address="United States of America", isbn="0-8194-5394-3" }