Detail publikace

RTS in submicron MOSFETs and quantum dots

ŠIKULA, J., PAVELKA, J., SEDLÁKOVÁ, V., TACANO, M., HASHIGUCHI, S., TOITA, M.

Originální název

RTS in submicron MOSFETs and quantum dots

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

In the present paper, emphasis is laid on those RTS showing a capture process, which deviates from the standard Schockley-Read-Hall kinetics. A modified two-step approach is proposed. In this case the charge carrier quantum transitions represent a primary process X(t), which involves two or three quantum states.

Klíčová slova v angličtině

RTS noise, Noise Spectral Density, MOSFET, Quantum Dots, Capture Time Constant, Emission Time Constant

Autoři

ŠIKULA, J., PAVELKA, J., SEDLÁKOVÁ, V., TACANO, M., HASHIGUCHI, S., TOITA, M.

Rok RIV

2004

Vydáno

1. 1. 2004

Nakladatel

The Society of Photo-Optical Instrumentation Engineers

Místo

United States of America

ISBN

0-8194-5394-3

Kniha

Proceedings of SPIE - Noise and Information in Nanoelectronics, Sensors, and Standards II

Strany od

64

Strany do

73

Strany počet

10

BibTex

@inproceedings{BUT12660,
  author="Josef {Šikula} and Jan {Pavelka} and Vlasta {Sedláková} and Munecazu {Tacano} and Sumihisa {Hashiguchi} and Masato {Toita}",
  title="RTS in submicron MOSFETs and quantum dots",
  booktitle="Proceedings of SPIE - Noise and Information in Nanoelectronics, Sensors, and Standards II",
  year="2004",
  pages="10",
  publisher="The Society of Photo-Optical Instrumentation Engineers",
  address="United States of America",
  isbn="0-8194-5394-3"
}