Detail publikačního výsledku

Bulk-driven class AB fully-balanced differential difference amplifier

KHATEB, F.; VLASSIS, S.; KULEJ, T.; SOULIOTIS, G.

Originální název

Bulk-driven class AB fully-balanced differential difference amplifier

Anglický název

Bulk-driven class AB fully-balanced differential difference amplifier

Druh

Článek WoS

Originální abstrakt

This paper presents a new low-voltage class AB fully-balanced differential difference amplifier (FB-DDA) employing the bulk-driven technique. At the FB-DDA differential pairs the bulk terminal of the MOS transistors are used as signal inputs in order to increase the common-mode input range (ICM) under low supply voltage. At the class AB output stages the bulk terminal of the MOS transistors are used as control inputs in order to adjust the quiescent currents and compensate them against the process and temperatures (P/T) variation. The voltage supply of the FB-DDA is 0.7 V and the quiescent power consumption is 8.3 uW. The open loop voltage gain is 68 dB and the gain-bandwidth product (GBW) is 168 kHz for 10 pF capacitive load. The circuit performance was simulated in Cadence/Spectre environment using the TSMC 0.18 um CMOS process.

Anglický abstrakt

This paper presents a new low-voltage class AB fully-balanced differential difference amplifier (FB-DDA) employing the bulk-driven technique. At the FB-DDA differential pairs the bulk terminal of the MOS transistors are used as signal inputs in order to increase the common-mode input range (ICM) under low supply voltage. At the class AB output stages the bulk terminal of the MOS transistors are used as control inputs in order to adjust the quiescent currents and compensate them against the process and temperatures (P/T) variation. The voltage supply of the FB-DDA is 0.7 V and the quiescent power consumption is 8.3 uW. The open loop voltage gain is 68 dB and the gain-bandwidth product (GBW) is 168 kHz for 10 pF capacitive load. The circuit performance was simulated in Cadence/Spectre environment using the TSMC 0.18 um CMOS process.

Klíčová slova

Bulk-driven CMOS; Low-voltage low-power CMOS; FB-DDA.

Klíčová slova v angličtině

Bulk-driven CMOS; Low-voltage low-power CMOS; FB-DDA.

Autoři

KHATEB, F.; VLASSIS, S.; KULEJ, T.; SOULIOTIS, G.

Rok RIV

2018

Vydáno

13.07.2017

Nakladatel

Springer

Místo

Netherlands

ISSN

0925-1030

Periodikum

ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING

Svazek

2017 (93)

Číslo

1, IF: 0.623

Stát

Nizozemsko

Strany od

179

Strany do

187

Strany počet

9

URL

http://dx.doi.org/10.1007/s10470-017-1024-1

BibTex

@article{BUT134892,
  author="Fabian {Khateb} and Spyridon {Vlassis} and Tomasz {Kulej} and George {Souliotis}",
  title="Bulk-driven class AB fully-balanced differential difference amplifier",
  journal="ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING",
  year="2017",
  volume="2017 (93)",
  number="1, IF: 0.623",
  pages="179--187",
  doi="10.1007/s10470-017-1024-1",
  issn="0925-1030",
  url="http://dx.doi.org/10.1007/s10470-017-1024-1"
}