Detail publikace

Morphological structure of solar cells based on silicon and gallium arsenide after ion etching

PAPEŽ, N.

Originální název

Morphological structure of solar cells based on silicon and gallium arsenide after ion etching

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

Study deals with the investigation of the surface after ion etching on two types of solar cells -- based on widely available polycrystalline silicon and on durable gallium arsenide for use in more demanding environments. Solar cell morphology was compared using an electron microscope together with an Energy Dispersive X-ray detector to show distribution ratios of elements. Atomic force microscopy was used to accurately describe the heights and roughness structure. Raman spectroscopy to study of vibrational properties and the stress investigations.

Klíčová slova

RIE, GaAs, Si, ion bombardment, EDX, SEM, AFM

Autoři

PAPEŽ, N.

Vydáno

26. 4. 2018

Místo

Brno

ISBN

978-80-214-5614-3

Kniha

Proceedings of the 24th Conference STUDENT EEICT 2018

Číslo edice

1

Strany od

513

Strany do

517

Strany počet

5

URL

http://www.feec.vutbr.cz/EEICT/archiv/sborniky/EEICT_2018_sbornik.pdf

BibTex

@inproceedings{BUT147353,
  author="Nikola {Papež}",
  title="Morphological structure of solar cells based on silicon and gallium arsenide after ion etching",
  booktitle="Proceedings of the 24th Conference STUDENT EEICT 2018",
  year="2018",
  number="1",
  pages="513--517",
  address="Brno",
  isbn="978-80-214-5614-3",
  url="http://www.feec.vutbr.cz/EEICT/archiv/sborniky/EEICT_2018_sbornik.pdf"
}