Detail publikace

RF Single-Pole Double-Throw Switch Based on Two-Port Memistor

VÁVRA, J. BAJER, J. BIOLEK, D.

Originální název

RF Single-Pole Double-Throw Switch Based on Two-Port Memistor

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

The paper introduces a novel memristive two-port element for an efficient construction of Radio Frequency (RF) single-pole double-throw (SPDT) switches, the so-called Two-Port Memistor (TPM). In comparison with the classical Widrow memistor whose resistance depends on the charge passing through the auxiliary terminal, the resistance of the TPM is governed by the controlling signal applied to the programming gate. It is demonstrated that the SPDT switch can be constructed via two TPMs such that the RF chokes providing DC references and capacitors for AC couplings are no longer necessary. Since the TPM-based switches provide elegant and much simpler circuit solutions than the currently developed memristive switches, this paper could stimulate the research towards manufacturing the TPM as a solid-state device.

Klíčová slova

RF switch; SPDT switch; Memistor; Memristive system

Autoři

VÁVRA, J.; BAJER, J.; BIOLEK, D.

Vydáno

9. 2. 2019

Nakladatel

IOP

Místo

USA

ISBN

9789994904709

Kniha

2018 IEEE Radio and Antenna Days of the Indian Ocean, RADIO 2018

ISSN

1757-8981

Periodikum

IOP Conference Series: Materials Science and Engineering

Ročník

524

Číslo

012008

Stát

Spojené království Velké Británie a Severního Irska

Strany od

1

Strany do

4

Strany počet

4

URL

https://doi.org/10.1088/1757-899X/524/1/012008

BibTex

@inproceedings{BUT158358,
  author="Jiří {Vávra} and Josef {Bajer} and Dalibor {Biolek}",
  title="RF Single-Pole Double-Throw Switch Based on Two-Port Memistor",
  booktitle="2018 IEEE Radio and Antenna Days of the Indian Ocean, RADIO 2018",
  year="2019",
  journal="IOP Conference Series: Materials Science and Engineering",
  volume="524",
  number="012008",
  pages="1--4",
  publisher="IOP",
  address="USA",
  doi="10.1088/1757-899X/524/1/012008",
  isbn="9789994904709",
  issn="1757-8981",
  url="https://doi.org/10.1088/1757-899X/524/1/012008"
}