Detail publikace

Stochastic processes in MOSFET transistors

Jan Havránek, Martin Bláha

Originální název

Stochastic processes in MOSFET transistors

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

Noise of electrical circuits is one of the the key parameters of today's communication systems. It limits the modulation quality of the information signal, and the cross-talk to adjacent channels. The noise spectroscopy in time and frequency domain is one of the promising methods to provide a non-destructive characterization of semiconductor materials and devices and also to determinate quality and reliability of researching devices. This applies to both active and passive components used in electrical circuits, i.e., bipolar, quantum dots and MOS structures, on one hand, and resistors and capacitors on the other. As a main diagnostic tool it is proposed to use low frequency current or voltage noise spectral density and theirs statistical distributions. In this paper, the most important noise sources generated in semiconductors and in their interfaces will be discussed, after that on MOSFET transistor to obtain proper noise model with all known noise sources.

Klíčová slova v angličtině

MOSFET, RTS noise, fluctuations and stochastic processes in semiconductors

Autoři

Jan Havránek, Martin Bláha

Rok RIV

2005

Vydáno

3. 11. 2005

Místo

Plzen

ISBN

80-7043-375-2

Kniha

Elektronika a Informatika 2005

Strany od

6

Strany do

9

Strany počet

4

BibTex

@inproceedings{BUT15956,
  author="Jan {Havránek} and Martin {Bláha}",
  title="Stochastic processes in MOSFET transistors",
  booktitle="Elektronika a Informatika 2005",
  year="2005",
  pages="4",
  address="Plzen",
  isbn="80-7043-375-2"
}