Detail publikace

The current and capacitance characteristics as a function of sample temperature in YMn0.90Os0.10O3/p-Si structures

Coskun, M. Polat, O. Coskun, FM. Efeoglu, H. Caglar, M. Durmus, Z. Turut, A.

Originální název

The current and capacitance characteristics as a function of sample temperature in YMn0.90Os0.10O3/p-Si structures

Typ

článek v časopise ve Web of Science, Jimp

Jazyk

angličtina

Originální abstrakt

The I-V and C-V measurements have been performed on the Al/YMn0.90Os0.10O3 (YMOO)/p-Si/Al metal/ferroelectric material/semiconductor (MFES) structure at temperatures between 180 K and 320 K. YMOO thin film has been grown onto p-Si wafer by radio frequency (rf) magnetron sputtering technique using a polycrystalline YMOO single target. The surface roughness of the obtained YMOO thin film has been studied by atomic force microscope (AFM). Furthermore, the oxidation states of individual components, Y and O, have been investigated via X-ray photoelectron spectroscopy (XPS) analyses. A barrier height (BH) value of Phi(IV) = 0.89 eV for the Al/YMOO/p-Si structure has been subtracted from the I-V curves at 300 K. The obtained value of BH value is higher than the value of the conventional Al/p-Si diode, 0.58 eV. The linear relation of ln(I-F/V-F(2)) vs V-F(-1) plot has indicated that Fowler-Nordheim tunneling current affects through the interfacial layer at each temperature. The BH from C-D(-2) versus V-D curves has been obtained as Phi(CV) = 0.38 eV at 300 K and this value is lower than the value of Phi(IV) = 0.89 eV at 300 K eV. Such behavior is unexpected because the value of Phi(CV) is higher than that of Phi(IV) at the same temperature in the heterojunctions or metal-semiconductor contacts.

Klíčová slova

CURRENT-VOLTAGE CHARACTERISTICS; STATE DENSITY DISTRIBUTION; C-V CHARACTERISTICS; BARRIER INHOMOGENEITIES; SCHOTTKY; YMNO3; FILMS; SPECTROSCOPY; HEIGHT; GAP

Autoři

Coskun, M.; Polat, O.; Coskun, FM.; Efeoglu, H.; Caglar, M.; Durmus, Z.; Turut, A.

Vydáno

1. 11. 2019

Nakladatel

ELSEVIER SCI LTD

Místo

OXFORD

ISSN

1369-8001

Periodikum

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Ročník

102

Číslo

1

Stát

Spojené království Velké Británie a Severního Irska

Strany od

1

Strany do

7

Strany počet

7

URL

https://www.sciencedirect.com/science/article/pii/S1369800119309527?via%3Dihub

BibTex

@article{BUT162062,
  author="Coskun, M. and Polat, O. and Coskun, FM. and Efeoglu, H. and Caglar, M. and Durmus, Z. and Turut, A.",
  title="The current and capacitance characteristics as a function of sample temperature in YMn0.90Os0.10O3/p-Si structures",
  journal="MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING",
  year="2019",
  volume="102",
  number="1",
  pages="1--7",
  doi="10.1016/j.mssp.2019.104587",
  issn="1369-8001",
  url="https://www.sciencedirect.com/science/article/pii/S1369800119309527?via%3Dihub"
}