Detail publikace

Dielectric Properties of Thin Tantalum Oxide Layers at Solid Tantalum Capacitors

ABUETWIRAT, I. LIEDERMANN, K.

Originální název

Dielectric Properties of Thin Tantalum Oxide Layers at Solid Tantalum Capacitors

Typ

prezentace, poster

Jazyk

angličtina

Originální abstrakt

In this paper MIS (Metal-Insulator-Semiconductor) Ta2O5 capacitor has been studied in terms of dielectric relaxation with a low frequency dielectric spectroscopy. The results acquired for Ta2O5 show a relaxation peak in the temperature and frequency range available, 187 K – 385 K, 1 Hz – 10 MHz. The loss peak frequency follows the Arrhenius law dependence with the activation energy of 0.048 eV. In conductivity spectra, Ta2O5 film exhibits a steady–state value at low frequencies and a monotonous increase at high frequencies depending on temperature. The observed conductivity followed a slightly superlinear power law.

Klíčová slova

thin oxide film; dielectric properties; Havriliak–Negami (HN) equation; electrical conductivity

Autoři

ABUETWIRAT, I.; LIEDERMANN, K.

Vydáno

29. 6. 2015

Nakladatel

Atlantis Press

Místo

Bangkok, Thailand

Strany od

889

Strany do

891

Strany počet

3

URL

https://www.atlantis-press.com/proceedings/cisia-15/22672

BibTex

@misc{BUT163658,
  author="Inas Faisel {Abuetwirat} and Karel {Liedermann}",
  title="Dielectric Properties of Thin Tantalum Oxide Layers at Solid Tantalum Capacitors",
  year="2015",
  pages="889--891",
  publisher="Atlantis Press",
  address="Bangkok, Thailand",
  doi="https://doi.org/10.2991/cisia-15.2015.238",
  url="https://www.atlantis-press.com/proceedings/cisia-15/22672",
  note="presentation, poster"
}