Detail publikace

Electron Mobility, Carrier Concentration and Noise Parameter of n-GaN – Numerical Analyses by Quantum Transport

TANIZAKI, H., YAMADA, M., PAVELKA, J.,

Originální název

Electron Mobility, Carrier Concentration and Noise Parameter of n-GaN – Numerical Analyses by Quantum Transport

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

Electron mobility, charge carrier concentration, resistivity and Hooge noise parameter of epitaxial n-GaN layer was analysed in terms of several scattering mechanisms and Handel quantum theory of noise. Numerical model in temperature range 20-300K was compared with experimental results of noise and Hall measurements and we found good agreement.

Klíčová slova v angličtině

GaN, scattering, mobility

Autoři

TANIZAKI, H., YAMADA, M., PAVELKA, J.,

Vydáno

1. 1. 2002

Nakladatel

Meisei Univeristy

Místo

Tokio

Strany od

132

Strany do

135

Strany počet

4

BibTex

@inproceedings{BUT16522,
  author="H. {Tanizaki} and M. {Yamada} and Jan {Pavelka} and Nobuhisa {Tanuma} and H. {Tanoue} and K. {Tomisawa} and Munecazu {Tacano}",
  title="Electron Mobility, Carrier Concentration and Noise Parameter of n-GaN – Numerical Analyses by Quantum Transport",
  booktitle="Proceedings of the 13th Symposium on Advanced Materials",
  year="2002",
  pages="4",
  publisher="Meisei Univeristy",
  address="Tokio"
}