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Petr Wandrol, Jiřina Matějková, Rudolf Autrata
Originální název
SEM Observation of Multilayer Semiconductor Structures Using Different Detection Modes
Typ
článek ve sborníku ve WoS nebo Scopus
Jazyk
angličtina
Originální abstrakt
Manufacturing of semiconductor devices especially chips is a very exact process susceptible to errors and therefore the detailed inspection and failure analysis is necessary. One of the non-destructive testing instruments is the Scanning Electron Microscope (SEM). The negative charging of the specimen is the main difficulty in the observation and imaging of semiconductor structures in the SEM. The influence of the semiconductor specimen charging on the quality of image provided by different detection systems was the goal of this contribution.
Klíčová slova
Multilayer Semiconductor Structures, SEM, detection
Autoři
Rok RIV
2005
Vydáno
28. 8. 2005
Nakladatel
Paul Scherrer Institut
Místo
Davos
Strany od
339
Strany do
Strany počet
1
BibTex
@inproceedings{BUT16652, author="Petr {Wandrol} and Jiřina {Matějková} and Rudolf {Autrata}", title="SEM Observation of Multilayer Semiconductor Structures Using Different Detection Modes", booktitle="PSI Proceedings of Dreilandertagung Microscopy Conference 2005", year="2005", volume="05", number="01", pages="1", publisher="Paul Scherrer Institut", address="Davos" }