Detail publikace

An investigation of structural and magnetotransport features of half-Heusler ScPtBi thin films

POLAT, Ö. MOHELSKÝ, I. ARREGI URIBEETXEBARRIA, J. HORÁK, M. POLČÁK, J. BUKVIŠOVÁ, K. ZLÁMAL, J. ŠIKOLA, T.

Originální název

An investigation of structural and magnetotransport features of half-Heusler ScPtBi thin films

Typ

článek v časopise ve Web of Science, Jimp

Jazyk

angličtina

Originální abstrakt

Half-Heusler materials have grabbed enormous devotion from scientific community owing to their novel electrical, magnetic, and optical features. In this paper, we report on ScPtBi half-Heusler thin films grown at 200 and 300 ? on Ta/Si (100) substrates by magnetron co-sputtering. X-ray diffraction studies have proved a polycrystalline structure of the synthesized films. In addition, the film deposited at 300 ? has possessed a secondary PtBi phase. Cross-sectional microstructures and surface topographies of the films have been investigated via scanning transmission electron microscopy and scanning electron microscopy, respectively. The stoichiometric composition of the films has been investigated by X-ray photoelectron spectroscopy studies. Magnetotransport measurements, conducted by a conventional four-probe method in a temperature range of 5-300 K and at fields up to 9 T, have unveiled the existence of the weak antilocalization (WAL) effect in the examined samples. The phase coherence length, l(phi), and the coefficient alpha have been extracted from the Hikami-Larkin-Nagaoka (HLN) relation. It has been shown that the extracted alpha values are between 800 and 1000, which highlights that the origin of the WAL effect results from the strong spin-orbit coupling (SOC) nature of the studied films rather than from topologically protected surface states. The Hall measurements performed at room temperature have shown that the major charge carriers are electrons and their mobility has been identified as 61 cm(2).V-1.s(-1) and 113 cm(2).V-1.s(-1) for the film deposited at 200 ? and 300 ?, respectively.

Klíčová slova

ScPtBi half-Heusler; Magnetron sputtering; Thin film; Magneto-transport measurements; Strong spin-orbit coupling

Autoři

POLAT, Ö.; MOHELSKÝ, I.; ARREGI URIBEETXEBARRIA, J.; HORÁK, M.; POLČÁK, J.; BUKVIŠOVÁ, K.; ZLÁMAL, J.; ŠIKOLA, T.

Vydáno

1. 5. 2022

Nakladatel

PERGAMON-ELSEVIER SCIENCE LTD

Místo

OXFORD

ISSN

1873-4227

Periodikum

MATERIALS RESEARCH BULLETIN

Ročník

149

Číslo

1

Stát

Spojené státy americké

Strany od

111696-1

Strany do

111696-7

Strany počet

7

URL