Detail publikačního výsledku

A Knudsen cell approach for the molecular beam epitaxy of the heavy fermion compound YbRh2Si2

Bakali, E.; Artner, W.; Beiser, M.; Bernardi, J.; Detz, H.; Eguchi, G.; Foelske, A.; Giparakis, M.; Herzig, C.; Limbeck, A.; Nguyen, H.; Prochaska, L.; Prokofiev, A.; Sauer, M.; Schwarz, S.; Schrenk, W.; Schrenk, W.; Strasser, G.; Svagera, R.; Taupin, M. ; Thirsfeld, AS.; Waas, M.; Yan, X.; Zocco, DA.; Andrews, AM.; Paschen, S.

Originální název

A Knudsen cell approach for the molecular beam epitaxy of the heavy fermion compound YbRh2Si2

Anglický název

A Knudsen cell approach for the molecular beam epitaxy of the heavy fermion compound YbRh2Si2

Druh

Článek WoS

Originální abstrakt

Thin films of the heavy fermion compound YbRh2Si2 were grown by molecular beam epitaxy on Ge (001) substrates using effusion cells. As-grown YbRh2Si2 thin films were characterized by a wide range of characterization techniques. X-ray diffraction yields a set of (00l) peaks, demonstrating epitaxial growth along the crystallographic c direction, with a lattice parameter c ranging from 9.84 angstrom-9.95 angstrom. The electrical resistivity shows behavior similar to YbRh2Si2 films grown previously using electron-beam evaporators for Rh and Si. The most stoichiometric sample appears to have the highest quality: It has the highest intensity ratio of the YbRh2Si2 (004) diffraction peak to the Ge (004) peak, the highest R(10 K)/R (2.3 K) ratio, a smallest surface roughness, and only a small density of surface defects.

Anglický abstrakt

Thin films of the heavy fermion compound YbRh2Si2 were grown by molecular beam epitaxy on Ge (001) substrates using effusion cells. As-grown YbRh2Si2 thin films were characterized by a wide range of characterization techniques. X-ray diffraction yields a set of (00l) peaks, demonstrating epitaxial growth along the crystallographic c direction, with a lattice parameter c ranging from 9.84 angstrom-9.95 angstrom. The electrical resistivity shows behavior similar to YbRh2Si2 films grown previously using electron-beam evaporators for Rh and Si. The most stoichiometric sample appears to have the highest quality: It has the highest intensity ratio of the YbRh2Si2 (004) diffraction peak to the Ge (004) peak, the highest R(10 K)/R (2.3 K) ratio, a smallest surface roughness, and only a small density of surface defects.

Klíčová slova

A1; X-ray diffraction; Reflection high energy electron diffraction; A3; Molecular beam epitaxy; B1; Metals; Rare earth compounds; B2; Superconducting materials

Klíčová slova v angličtině

A1; X-ray diffraction; Reflection high energy electron diffraction; A3; Molecular beam epitaxy; B1; Metals; Rare earth compounds; B2; Superconducting materials

Autoři

Bakali, E.; Artner, W.; Beiser, M.; Bernardi, J.; Detz, H.; Eguchi, G.; Foelske, A.; Giparakis, M.; Herzig, C.; Limbeck, A.; Nguyen, H.; Prochaska, L.; Prokofiev, A.; Sauer, M.; Schwarz, S.; Schrenk, W.; Schrenk, W.; Strasser, G.; Svagera, R.; Taupin, M. ; Thirsfeld, AS.; Waas, M.; Yan, X.; Zocco, DA.; Andrews, AM.; Paschen, S.

Rok RIV

2023

Vydáno

01.10.2022

Nakladatel

ELSEVIER

Místo

AMSTERDAM

ISSN

1873-5002

Periodikum

JOURNAL OF CRYSTAL GROWTH

Svazek

595

Číslo

126804

Stát

Nizozemsko

Strany počet

6

URL

https://www.sciencedirect.com/science/article/pii/S0022024822002895?via%3Dihub

BibTex

@article{BUT182442,
  author="Bakali, E. and Artner, W. and Beiser, M. and Bernardi, J. and Detz, H. and Eguchi, G. and Foelske, A. and Giparakis, M. and Herzig, C. and Limbeck, A. and Nguyen, H. and Prochaska, L. and Prokofiev, A. and Sauer, M. and Schwarz, S. and Schrenk, W. and Schrenk, W. and Strasser, G. and Svagera, R. and Taupin, M. and Thirsfeld, AS. and Waas, M. and Yan, X. and Zocco, DA. and Andrews, AM. and Paschen, S.",
  title="A Knudsen cell approach for the molecular beam epitaxy of the heavy fermion compound YbRh2Si2",
  journal="JOURNAL OF CRYSTAL GROWTH",
  year="2022",
  volume="595",
  number="126804",
  pages="6",
  doi="10.1016/j.jcrysgro.2022.126804",
  issn="0022-0248",
  url="https://www.sciencedirect.com/science/article/pii/S0022024822002895?via%3Dihub"
}