Detail publikace

Direct visualization and 3D reconstruction of conductive filaments in aSiO2 material-based memristive device

Slang, S. Gu, B. Zhang, B. Janicek, P. Rodriguez-Pereira, J. Wagner, T.

Originální název

Direct visualization and 3D reconstruction of conductive filaments in aSiO2 material-based memristive device

Typ

článek v časopise ve Web of Science, Jimp

Jazyk

angličtina

Originální abstrakt

Observation of conductive filaments has greatly aided the development of theoretical models of memristive devices. In this work, we visualized and reconstructed the conductive filaments in a Cu/Cu-doped SiO2/W device employing a focused ion beam (FIB) as a milling technique. The SEM images taken from the device after 150 DC sweep cycles showed that Joule heat played a vital role in determining the morphology of a conductive filament, where the vaporization of the conductive filament resulted in the creation of defects, including particles, voids, and cavities. The competition between the formation and vaporization of conductive filaments generally induces a remarkable current fluctuation. Since Cu-doped SiO2 was utilized as the electrolyte, the vapors exfoliated adjacent single layers. FIB milling proceeded in top-down and front-back modes; thus, a 3D model of conductive filaments and defects was constructed according to a series of FIB-SEM images. This methodology is promising for a future failure analysis of memristive devices.

Klíčová slova

PERFORMANCE

Autoři

Slang, S.; Gu, B.; Zhang, B.; Janicek, P.; Rodriguez-Pereira, J.; Wagner, T.

Vydáno

27. 3. 2024

Nakladatel

ROYAL SOC CHEMISTRY

Místo

CAMBRIDGE

ISSN

1463-9084

Periodikum

Physical Chemistry Chemical Physics

Ročník

26

Číslo

13

Stát

Spojené království Velké Británie a Severního Irska

Strany od

10069

Strany do

10077

Strany počet

9

URL

BibTex

@article{BUT188828,
  author="Slang, S. and Gu, B. and Zhang, B. and Janicek, P. and Rodriguez-Pereira, J. and Wagner, T.",
  title="Direct visualization and 3D reconstruction of conductive filaments in aSiO2 material-based memristive device",
  journal="Physical Chemistry Chemical Physics",
  year="2024",
  volume="26",
  number="13",
  pages="10069--10077",
  doi="10.1039/d4cp00274a",
  issn="1463-9084",
  url="https://pubs.rsc.org/en/content/articlelanding/2024/cp/d4cp00274a"
}