Detail publikace

Analysis of Fermi Level Position the CdTe Single Crystal

ANDREEV, A.

Originální název

Analysis of Fermi Level Position the CdTe Single Crystal

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

The CdTe single crystal radiation detector resistance was measured during long time inter-val with applied voltage U=1V. Effect of temperature changes on the hole concentration, the hole mobility and the Fermi level position was studied this way. The hole concentration, the hole mobility and the Fermi level position as a functions of time were calculated. Analysis of the resistance show that the hole concentration is almost constant with temperature changing. It begins to change appreciably just after the tempera-ture became constant. The resistance changing is influenced mainly by the hole mobility changing. As temperature is constant, the resistance changing is influenced only by the hole concentration changing

Klíčová slova

Fermi Level Position, CdTe detectors, Hole concentration, hole mobility

Autoři

ANDREEV, A.

Rok RIV

2007

Vydáno

1. 1. 2007

Nakladatel

Ing. Zdeněk NovotnýCsc, Ondračkova 105 Brno

Místo

Brno, Czech Republic

ISBN

978-80-214-3409-7

Kniha

Proceedings of the 13th Conference Student EEICT 2007, Volume 3

Strany od

215

Strany do

219

Strany počet

5

BibTex

@inproceedings{BUT22567,
  author="Alexey {Andreev}",
  title="Analysis of Fermi Level Position the CdTe Single Crystal",
  booktitle="Proceedings of the 13th Conference Student EEICT 2007, Volume 3",
  year="2007",
  pages="5",
  publisher="Ing. Zdeněk NovotnýCsc, Ondračkova 105 Brno",
  address="Brno, Czech Republic",
  isbn="978-80-214-3409-7"
}