Detail publikace

Characterization of Nonlinear On-Chip Capacitors

SUTORÝ, T. KOLKA, Z.

Originální název

Characterization of Nonlinear On-Chip Capacitors

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

The paper deals with nonlinear on-chip capacitor characterization. A modification of CBCM (Charge-Based Capacitance Measurements) has been proposed. The CBCM method was originally developed for linear interconnect-capacitance measurements. The proposed modification uses two DC swept sources to measure the whole nonlinear Q-v characteristic in both polarities without the necessity to switch the measured object. The main advantage of the method is high resolution although it is based on equipment found in any average laboratory. A test-chip implementing the method was designed and manufactured in 0.35m CMOS process. Verification against known capacitances proved the method correctness and accuracy. The test-chip was successfully used for MOSFET gate-capacitance characterization.

Klíčová slova

Microelectronics, CBCM, testing

Autoři

SUTORÝ, T.; KOLKA, Z.

Rok RIV

2007

Vydáno

1. 4. 2007

Nakladatel

Brno University of Technology

Místo

Brno

ISBN

1-4244-0821-0

Kniha

Proceedings of the 17th International Conference Radioelektronka 2007

Strany od

51

Strany do

55

Strany počet

5

BibTex

@inproceedings{BUT23787,
  author="Tomáš {Sutorý} and Zdeněk {Kolka}",
  title="Characterization of Nonlinear On-Chip Capacitors",
  booktitle="Proceedings of the 17th International Conference Radioelektronka 2007",
  year="2007",
  pages="5",
  publisher="Brno University of Technology",
  address="Brno",
  isbn="1-4244-0821-0"
}