Detail publikace

SCALING DOWN AND LOW FREQUENCY NOISE TESTING OF SUBMICRON MOSFET'S

HAVRÁNEK, J.

Originální název

SCALING DOWN AND LOW FREQUENCY NOISE TESTING OF SUBMICRON MOSFET'S

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

A large amount of experimental results show that for MOSFET's with channel area exceed-ing 10 mikrom2, 1/f noise is clearly present. On the other hand, for transistors of area less than 1 mikrom2, Random Telegraph Signals (RTS) are appearing, giving rise to lorentzian spectra. A relation is established between the level of 1/f noise and the defectiveness of the device. An important result concerns the reliability of integrated circuits: beyond a certain limit of scaling down, one can show that it is impossible to predict, with a given accuracy, the low frequency noise of an individual transistor. A critical question also arises: are the RTS's the ultimate components of the 1/f noise In this paper, we emphasize the interest of observing extensively intermediate cases MOSFET's (i.e., with a surface of a few mikrom2). In these cases, several traps are involved, leading to single or multi level temporal signals.[

Klíčová slova

1/f noise, Mosfet, scaling down

Autoři

HAVRÁNEK, J.

Rok RIV

2007

Vydáno

26. 4. 2007

Nakladatel

VUTIUM

Místo

Brno

Strany od

4

Strany do

8

Strany počet

4

BibTex

@inproceedings{BUT24030,
  author="Jan {Havránek}",
  title="SCALING DOWN AND LOW FREQUENCY NOISE TESTING OF SUBMICRON MOSFET'S",
  booktitle="Studentská soutěž a konference STUDENT EEICT 2007",
  year="2007",
  pages="4--8",
  publisher="VUTIUM",
  address="Brno"
}