Detail publikace
Si Diode - Determination of Generation and Recombination Coefficients
RAŠKA, M. PALAI-DANY, T.
Originální název
Si Diode - Determination of Generation and Recombination Coefficients
Typ
článek ve sborníku ve WoS nebo Scopus
Jazyk
angličtina
Originální abstrakt
The article deals with a study microplasma regions which is characterized by bistable current noise, microplasma noise. The microplasma noise is possible to describe with two state stochastic process of generation - recombination type. The cofficients generation and recombination can be determined by several methods, which are inside the article.
Klíčová slova
microplasma, breakdown, PN junction, diode, recombination, generation
Autoři
RAŠKA, M.; PALAI-DANY, T.
Rok RIV
2007
Vydáno
13. 8. 2007
Nakladatel
University of Miskolc
Místo
Miskolc, Hungary
ISBN
978-963-661-779-0
Kniha
6th International Conference of Phd Students
Edice
1
Číslo edice
1
Strany od
361
Strany do
366
Strany počet
5
BibTex
@inproceedings{BUT28769,
author="Michal {Raška} and Tomáš {Palai-Dany}",
title="Si Diode - Determination of Generation and Recombination Coefficients",
booktitle="6th International Conference of Phd Students",
year="2007",
series="1",
number="1",
pages="361--366",
publisher="University of Miskolc",
address="Miskolc, Hungary",
isbn="978-963-661-779-0"
}