Detail publikace
Tunnel noise spectroscopy by reflection SNOM and STM
TOMÁNEK, P. GRMELA, L. BRÜSTLOVÁ, J. DOBIS, P.
Originální název
Tunnel noise spectroscopy by reflection SNOM and STM
Typ
článek v časopise - ostatní, Jost
Jazyk
angličtina
Originální abstrakt
The 1/f noise is a general phenomenon in physical systems. In this paper low - frequency noise of silicon crystal have been analyzed. Noise spectra can not be explained completely by a homogeneous band model of semiconductor. Therefore, we have developed a new tool, so called Tunnel Noise Spectroscopy permitting to localize a noise sources on the surface. Some applications of Scanning Tunneling Microscopy (STM) and of Reflection Scanning Near-field Optical Microscopy (r-SNOM) in the investigation of 1/f noise of the semiconductor surface coated by a thin gold film are also presented.
Klíčová slova
1/f noise, STM, r-SNOM, measurements, tunnel noise spectroscopy, local index variation
Autoři
TOMÁNEK, P.; GRMELA, L.; BRÜSTLOVÁ, J.; DOBIS, P.
Rok RIV
1997
Vydáno
16. 6. 1997
Nakladatel
SPIE
Místo
Bellingham, USA
ISSN
0277-786X
Periodikum
Proceedings of SPIE
Ročník
3098
Číslo
1
Stát
Spojené státy americké
Strany od
514
Strany do
514
Strany počet
1
BibTex
@article{BUT38525,
author="Pavel {Tománek} and Lubomír {Grmela} and Jitka {Brüstlová} and Pavel {Dobis}",
title="Tunnel noise spectroscopy by reflection SNOM and STM",
journal="Proceedings of SPIE",
year="1997",
volume="3098",
number="1",
pages="1",
issn="0277-786X"
}