Detail publikace

Low-temperature epitaxial growth of the quaternary wide band gap semiconductor SiCAlN

ROUČKA, R., TOLLE, J., CROZIER, P., CHIZMESHYA, A., TSONG, I., KOUVETAKIS, J., POWELEIT, C., SMITH, D.

Originální název

Low-temperature epitaxial growth of the quaternary wide band gap semiconductor SiCAlN

Typ

článek v časopise - ostatní, Jost

Jazyk

angličtina

Originální abstrakt

Two compounds SiC and AlN, normally insoluble in each other below similar to2000 degreesC , are synthesized as a single-phase solid-solution thin film by molecular beam epitaxy at 750 degreesC. The growth of epitaxial SiCAlN films with hexagonal structure takes place on 6H-SiC(0001) substrates. Two structural models for the hexagonal SiCAlN films are constructed based on first-principles total-energy density functional theory calculations, each showing agreement with the experimental microstructures observed in cross-sectional transmission electron microscopy images. The predicted fundamental band gap is 3.2 eV for the stoichiometric SiCAlN film.

Klíčová slova v angličtině

DENSITY-FUNCTIONAL THEORY, MOLECULAR-BEAM EPITAXY, POLY-ATOMIC SYSTEMS, ALUMINUM NITRIDE, ELECTRONIC-STRUCTURE, SILICON-CARBIDE, SOLID-SOLUTIONS, ALLOYS, INTERFACES, AIN

Autoři

ROUČKA, R., TOLLE, J., CROZIER, P., CHIZMESHYA, A., TSONG, I., KOUVETAKIS, J., POWELEIT, C., SMITH, D.

Rok RIV

2004

Vydáno

20. 5. 2002

ISSN

0031-9007

Periodikum

Physical Review Letters

Ročník

88

Číslo

20

Stát

Spojené státy americké

Strany od

206102

Strany do

206106

Strany počet

5

BibTex

@article{BUT40591,
  author="Radek {Roučka} and J. {Tolle} and P. {Crozier} and A. {Chizmeshya} and I. {Tsong} and J. {Kouvetakis} and C. D. {Poweleit} and D. J. {Smith}",
  title="Low-temperature epitaxial growth of the quaternary wide band gap semiconductor SiCAlN",
  journal="Physical Review Letters",
  year="2002",
  volume="88",
  number="20",
  pages="5",
  issn="0031-9007"
}