Detail publikace
Low-temperature growth of SiCAlN films of high hardness on Si(111) substrates
ROUČKA, R., TOLLE, J., CROZIER, P., TSONG, I., KOUVETAKIS, J., SMITH, D.
Originální název
Low-temperature growth of SiCAlN films of high hardness on Si(111) substrates
Typ
článek v časopise - ostatní, Jost
Jazyk
angličtina
Originální abstrakt
Thin films of metastable SiCAlN solid solution were deposited on Si(111) substrates at 550-750 degreesC, considerably below the miscibility gap of SiC and AlN phases at 1900 degreesC. Our low-temperature growth was based upon thermally activated reactions between a unimolecular precursor H3SiCN and Al atoms from an evaporative cell in a molecular-beam-epitaxy chamber. Characterization of deposited films by spectroscopic and microscopic techniques yielded near-stoichiometric composition throughout the columnar wurtzite structure with lattice parameters very close to those of 2H-SiC and hexagonal AlN. An average hardness of 25 GPa was measured for the SiCAlN films, comparable to that measured for sapphire. (C) 2001 American Institute of Physics.
Klíčová slova v angličtině
MOLECULAR-BEAM EPITAXY, SILICON-CARBIDE, SOLID-SOLUTIONS, ALUMINUM NITRIDE, DEPOSITION, SYSTEM, ALN, AIN
Autoři
ROUČKA, R., TOLLE, J., CROZIER, P., TSONG, I., KOUVETAKIS, J., SMITH, D.
Rok RIV
2002
Vydáno
23. 10. 2002
ISSN
0003-6951
Periodikum
Applied Physics Letters
Ročník
79
Číslo
18
Stát
Spojené státy americké
Strany od
2880
Strany do
2882
Strany počet
3
BibTex
@article{BUT40592,
author="Radek {Roučka} and J. {Tolle} and P. {Crozier} and I. {Tsong} and J. {Kouvetakis} and D. J. {Smith}",
title="Low-temperature growth of SiCAlN films of high hardness on Si(111) substrates",
journal="Applied Physics Letters",
year="2002",
volume="79",
number="18",
pages="3",
issn="0003-6951"
}