Detail publikace

Low-temperature growth of SiCAlN films of high hardness on Si(111) substrates

ROUČKA, R., TOLLE, J., CROZIER, P., TSONG, I., KOUVETAKIS, J., SMITH, D.

Originální název

Low-temperature growth of SiCAlN films of high hardness on Si(111) substrates

Typ

článek v časopise - ostatní, Jost

Jazyk

angličtina

Originální abstrakt

Thin films of metastable SiCAlN solid solution were deposited on Si(111) substrates at 550-750 degreesC, considerably below the miscibility gap of SiC and AlN phases at 1900 degreesC. Our low-temperature growth was based upon thermally activated reactions between a unimolecular precursor H3SiCN and Al atoms from an evaporative cell in a molecular-beam-epitaxy chamber. Characterization of deposited films by spectroscopic and microscopic techniques yielded near-stoichiometric composition throughout the columnar wurtzite structure with lattice parameters very close to those of 2H-SiC and hexagonal AlN. An average hardness of 25 GPa was measured for the SiCAlN films, comparable to that measured for sapphire. (C) 2001 American Institute of Physics.

Klíčová slova v angličtině

MOLECULAR-BEAM EPITAXY, SILICON-CARBIDE, SOLID-SOLUTIONS, ALUMINUM NITRIDE, DEPOSITION, SYSTEM, ALN, AIN

Autoři

ROUČKA, R., TOLLE, J., CROZIER, P., TSONG, I., KOUVETAKIS, J., SMITH, D.

Rok RIV

2002

Vydáno

23. 10. 2002

ISSN

0003-6951

Periodikum

Applied Physics Letters

Ročník

79

Číslo

18

Stát

Spojené státy americké

Strany od

2880

Strany do

2882

Strany počet

3

BibTex

@article{BUT40592,
  author="Radek {Roučka} and J. {Tolle} and P. {Crozier} and I. {Tsong} and J. {Kouvetakis} and D. J. {Smith}",
  title="Low-temperature growth of SiCAlN films of high hardness on Si(111) substrates",
  journal="Applied Physics Letters",
  year="2002",
  volume="79",
  number="18",
  pages="3",
  issn="0003-6951"
}