Detail publikace

Local spectroscopy by scanning near-field optical microscopy

LÉTAL, P., TOMÁNEK, P., DOBIS, P., BRÜSTLOVÁ, J., GRMELA, L.

Originální název

Local spectroscopy by scanning near-field optical microscopy

Typ

článek v časopise - ostatní, Jost

Jazyk

angličtina

Originální abstrakt

The photoluminescence (PL) spectroscopy has for a long time been established as a very efficient, nondestructive technique for the evaluation of semiconductor materials and heterostructures. At room temperature, the band-gap-energy of ternary and quaternary epitaxial layers can be determined from the position of the PL peak, and the half-width of the PL curve is correlated with the free-carrier concentration. Both these parameters are important for the preparation of new epitaxial layers and structures for optoelectronic devices and applications. The comparison of PL obtained in the Near-field optical region and corresponding electroluminescent spectra in the Far-field from diodes based on investigated material helps to analyze the relative contributions - of the material luminescence (PL), and - the wave-guiding properties of the heterostructure, to the spectrum emitted from the diode edge.

Klíčová slova

photoluminescence, local characteristics, SNOM,

Autoři

LÉTAL, P., TOMÁNEK, P., DOBIS, P., BRÜSTLOVÁ, J., GRMELA, L.

Rok RIV

2004

Vydáno

2. 5. 1998

ISSN

1210-2717

Periodikum

Inženýrská mechanika - Engineering Mechanics

Ročník

5

Číslo

3

Stát

Česká republika

Strany od

215

Strany do

218

Strany počet

4

BibTex

@article{BUT41424,
  author="Petr {Létal} and Pavel {Tománek} and Pavel {Dobis} and Jitka {Brüstlová} and Lubomír {Grmela}",
  title="Local spectroscopy by scanning near-field optical microscopy",
  journal="Inženýrská mechanika - Engineering Mechanics",
  year="1998",
  volume="5",
  number="3",
  pages="4",
  issn="1210-2717"
}