Detail publikace

Breakdown characteristics and low frequency noise of niobium based capacitors

ŠIKULA, J. VRBA, R. GRMELA, L. ZEDNÍČEK, T. SITA, Z.

Originální název

Breakdown characteristics and low frequency noise of niobium based capacitors

Typ

článek v časopise - ostatní, Jost

Jazyk

angličtina

Originální abstrakt

New capacitor technologies based on Niobium (Nb)and Niobium Oxide (NbO) powders in conjunction with niobium pentoxide (Nb2O5) dielectric have been released recently. These technologies are based on processes nearly identical to those of conventional tantalum (Ta) capacitors. One of the key features of the NbO, in contrast to Nb and Ta, is its' high resistance to ignition. This is due to the intrinsically higher ignition energy of NbO material and higher resistance failure mode after dielectric breakdown. This paper describes the behaviour of NbO capacitors after forced dielectric breakdown with both forward and reverse voltages applied. A low frequency analysis of the charge carrier transport mechanism has been performed on the Nb/NbO - Nb2O5 - MnO2 systems and the mechanisms governing current flow and noise sources have been determined. The ideal metal / insulator / semiconductor (MIS) structure is shown in Fig.1. This paper also reviews the basic features of these capacitor technologies and provides a foundation for understanding fluctuation phenomena in the real structure of niobium pentoxide

Klíčová slova v angličtině

Niobium Oxide, breakdown, capacitors, ignition energy

Autoři

ŠIKULA, J.; VRBA, R.; GRMELA, L.; ZEDNÍČEK, T.; SITA, Z.

Rok RIV

2003

Vydáno

5. 4. 2003

ISSN

0887-7491

Periodikum

Capacitor and Resistor Technology

Ročník

2003

Číslo

4

Stát

Spojené státy americké

Strany od

53

Strany do

59

Strany počet

7

BibTex

@article{BUT41704,
  author="Josef {Šikula} and Radimír {Vrba} and Lubomír {Grmela} and Tomáš {Zedníček} and Zdeněk {Sita}",
  title="Breakdown characteristics and low frequency noise of niobium based capacitors",
  journal="Capacitor and Resistor Technology",
  year="2003",
  volume="2003",
  number="4",
  pages="7",
  issn="0887-7491"
}