Detail publikace

Scanning near-field optical microscopy in semiconductor research

TOMÁNEK, P. BENEŠOVÁ, M. OTEVŘELOVÁ, D. DOBIS, P.

Originální název

Scanning near-field optical microscopy in semiconductor research

Typ

článek v časopise ve Web of Science, Jimp

Jazyk

angličtina

Originální abstrakt

Exploration of optical properties of materials and optical characterization of structure defects at the nanometer scale was impossible until recently due to the diffraction limit of light. With the invention of Scanning near-field optical microscopy (SNOM) the spatial resolution at the 50-100 nm level using visible or near infrared light is now possible.This review focuses on some applications of SNOM techniques of nondestructive, non-contact spectroscopic investigation of the structures.Throughout the review, weight is placed on how SNOM goes together with existing material characterization techniques, as well as how quantitative results can be obtained from SNOM measurements.

Klíčová slova

near-field optics, scanning, microscopy, semiconductor, optical characterization, optical properties,

Autoři

TOMÁNEK, P.; BENEŠOVÁ, M.; OTEVŘELOVÁ, D.; DOBIS, P.

Rok RIV

2004

Vydáno

5. 9. 2004

Nakladatel

V S V CO

Místo

Moscow, Russia

ISSN

0204-3467

Periodikum

Physics of low-dimensional structures

Ročník

2004

Číslo

1/2

Stát

Spojené státy americké

Strany od

47

Strany do

53

Strany počet

7

BibTex

@article{BUT42142,
  author="Pavel {Tománek} and Markéta {Benešová} and Dana {Otevřelová} and Pavel {Dobis}",
  title="Scanning near-field optical microscopy in semiconductor research",
  journal="Physics of low-dimensional structures",
  year="2004",
  volume="2004",
  number="1/2",
  pages="47--53",
  issn="0204-3467"
}