Detail publikace

Analysis of thin films by TOF-LEIS

PRŮŠA, S. KOLÍBAL, M. BÁBOR, P. MACH, J. ŠIKOLA, T.

Originální název

Analysis of thin films by TOF-LEIS

Typ

článek v časopise - ostatní, Jost

Jazyk

angličtina

Originální abstrakt

In the paper the design and application of a TOF-LEIS instrument built into an UHV complex deposition and analytical apparatus is described. A special attention is aimed at demonstrating the ability of TOF-LEIS to analyse near-to-surface layers of thin films prepared both ex-situ and in-situ. Additionally, the monitoring of diffusion processes close to a sample surface by this technique is presented. It is shown that the broadening of peaks in TOF-LEIS spectra can be attributed to multiple scattering and inelastic losses of ions in deeper layers. As a result of that, the peak width of ultrathin films depends on their thickness.

Klíčová slova

Time of Flight, TOF, Low energy, Ion Scattering, LEIS, Surfaces

Autoři

PRŮŠA, S.; KOLÍBAL, M.; BÁBOR, P.; MACH, J.; ŠIKOLA, T.

Rok RIV

2007

Vydáno

1. 5. 2007

ISSN

0587-4246

Periodikum

ACTA PHYSICA POLONICA A

Ročník

111

Číslo

3

Stát

Polská republika

Strany od

335

Strany do

341

Strany počet

7

BibTex

@article{BUT43454,
  author="Stanislav {Průša} and Miroslav {Kolíbal} and Petr {Bábor} and Jindřich {Mach} and Tomáš {Šikola}",
  title="Analysis of thin films by TOF-LEIS",
  journal="ACTA PHYSICA POLONICA A",
  year="2007",
  volume="111",
  number="3",
  pages="335--341",
  issn="0587-4246"
}