Detail publikace

Temperature dependence of 1/f noise in p- and n-InGaAs/InAlAs heterostructures

PAVELKA, J., TANUMA, N., TACANO, M., ŠIKULA, J., MUSHA, T.

Originální název

Temperature dependence of 1/f noise in p- and n-InGaAs/InAlAs heterostructures

Typ

článek v časopise - ostatní, Jost

Jazyk

angličtina

Originální abstrakt

The temperature dependence of Hooge parameter alfaH of the p- and n-InGaAs/InAlAs heterostructures was measured in 15K to 300K range. The p-type alfaH ~ 1 doesn’t change with temperature, the n-type alfaH ~ 2x10-3 is constant down to 150K and then increases about one order, probably due to the influence of traps.

Klíčová slova v angličtině

InGaAs HEMT, 1/f noise

Autoři

PAVELKA, J., TANUMA, N., TACANO, M., ŠIKULA, J., MUSHA, T.

Vydáno

1. 1. 2004

ISSN

1346-7239

Periodikum

Research Bulletin of Meisei University – Physical Sciences and Engineering

Ročník

40

Číslo

1

Stát

Japonsko

Strany od

87

Strany do

93

Strany počet

7

BibTex

@article{BUT45792,
  author="Jan {Pavelka} and Nobuhisa {Tanuma} and Munecazu {Tacano} and Josef {Šikula} and Toshimitsu {Musha}",
  title="Temperature dependence of 1/f noise in p- and n-InGaAs/InAlAs heterostructures",
  journal="Research Bulletin of Meisei University – Physical Sciences and Engineering",
  year="2004",
  volume="40",
  number="1",
  pages="7",
  issn="1346-7239"
}