Detail publikace

Silicon-silicon dioxide nanostructure in electrostatic field

HRUŠKA, P. GRMELA, L.

Originální název

Silicon-silicon dioxide nanostructure in electrostatic field

Typ

článek v časopise - ostatní, Jost

Jazyk

angličtina

Originální abstrakt

Paper presents a numerical analysis of quantum states and probability function of a Si-SiO2 nanostructure in varying electrostatic field. The position of probability function peak is traced, and bias, under which it abandons the structure is determined. Variation of the ground state energy with the bias is also examined. The Poisson-Schrodinger model of Comsol Multiphysics program is devised and employed. The results would help understanding the electronic properties and behavior ultrascaled Si-SiO2 memory devices utilizing semiconducting quantum dots and Si single nanocrystals, to mention only one application.

Klíčová slova

nanostructure, Si-SiO2 quantum dot, discharging bias, poisson-Schrödinger numerical analysis, Comsol Multiphysics

Autoři

HRUŠKA, P.; GRMELA, L.

Rok RIV

2010

Vydáno

14. 9. 2010

Nakladatel

TU Košice

Místo

Košice

ISSN

1335-8243

Periodikum

Acta Electrotechnica et Informatica

Ročník

10

Číslo

3

Stát

Slovenská republika

Strany od

22

Strany do

25

Strany počet

4

BibTex

@article{BUT50849,
  author="Pavel {Hruška} and Lubomír {Grmela}",
  title="Silicon-silicon dioxide nanostructure in electrostatic field",
  journal="Acta Electrotechnica et Informatica",
  year="2010",
  volume="10",
  number="3",
  pages="22--25",
  issn="1335-8243"
}