Detail publikačního výsledku

Locally resolved topography and spectroscopy of semiconductors (with lateral resolution better than 250 nm)

LÉTAL, P., TOMÁNEK, P., DOBIS, P., GRMELA, L., BRÜSTLOVÁ, J.

Originální název

Locally resolved topography and spectroscopy of semiconductors (with lateral resolution better than 250 nm)

Anglický název

Locally resolved topography and spectroscopy of semiconductors (with lateral resolution better than 250 nm)

Druh

Kapitola, resp. kapitoly v odborné knize

Originální abstrakt

Locally resolved topography and spectroscopy of semiconductors show both the better lateral resolution than 250 nm using nondestructive testing.

Anglický abstrakt

Locally resolved topography and spectroscopy of semiconductors show both the better lateral resolution than 250 nm using nondestructive testing.

Klíčová slova

local topography, local spectroscopy, semiconductors, SNOM

Klíčová slova v angličtině

local topography, local spectroscopy, semiconductors, SNOM

Autoři

LÉTAL, P., TOMÁNEK, P., DOBIS, P., GRMELA, L., BRÜSTLOVÁ, J.

Vydáno

20.09.1998

Nakladatel

Technical University of Brno

Místo

Brno

ISBN

80-214-119

Kniha

Electronic devices and systems (EDS´98)

Strany od

169

Strany počet

4

BibTex

@inbook{BUT54077,
  author="Petr {Létal} and Pavel {Tománek} and Pavel {Dobis} and Lubomír {Grmela} and Jitka {Brüstlová}",
  title="Locally resolved topography and spectroscopy of semiconductors (with lateral resolution better than 250 nm)",
  booktitle="Electronic devices and systems (EDS´98)",
  year="1998",
  publisher="Technical University of Brno",
  address="Brno",
  pages="4",
  isbn="80-214-119"
}