Detail publikace

Time-resolved contrast in near-field scanning optical microscopy of semiconductors

BENEŠOVÁ, M., DOBIS, P., TOMÁNEK, P., BRÜSTLOVÁ, J.

Originální název

Time-resolved contrast in near-field scanning optical microscopy of semiconductors

Typ

abstrakt

Jazyk

angličtina

Originální abstrakt

The lifetime local measurement of excess carriers in silicon samples are described. The work was performed with the implementation of scanning near-field optical microscopy (SNOM). We present here an alternative development of SNOM: its implementation as an imaging tool to study the dynamics of excess carriers in semiconductor devices. We concentrate on obtaining images for which the contrast mechanism is a time-dependent property of the sample, and attempt to relate them to important sample characteristics.

Klíčová slova

carrier lifetime, near-field spectroscopy, optical near-field microscopy, semiconductor, deffect.

Autoři

BENEŠOVÁ, M., DOBIS, P., TOMÁNEK, P., BRÜSTLOVÁ, J.

Vydáno

21. 10. 2003

Místo

Brno

ISBN

80-214-2486-9

Kniha

Nano´03

Strany od

51

Strany do

51

Strany počet

1

BibTex

@misc{BUT60180,
  author="Markéta {Benešová} and Pavel {Dobis} and Pavel {Tománek} and Jitka {Brüstlová}",
  title="Time-resolved contrast in near-field scanning optical microscopy of semiconductors",
  booktitle="Nano´03",
  year="2003",
  pages="1",
  address="Brno",
  isbn="80-214-2486-9",
  note="abstract"
}