Detail publikačního výsledku

Quinhydrone Chemical Passivation of a Silicon Surface for Minority Carrier Bulk-Lifetime Measurements

SOLČANSKÝ, M.; VANĚK, J.; PORUBA, A.

Originální název

Quinhydrone Chemical Passivation of a Silicon Surface for Minority Carrier Bulk-Lifetime Measurements

Anglický název

Quinhydrone Chemical Passivation of a Silicon Surface for Minority Carrier Bulk-Lifetime Measurements

Druh

Článek WoS

Originální abstrakt

For the measurement of the minority carrier bulk-lifetime the characterization method MW-PCD is used, where the result of measurement is the effective carrier lifetime, which is very dependent on the surface recombination velocity and therefore on the quality of a silicon surface passivation. This work deals with an examination of a different solution types for the chemical passivation of a silicon surface. Various solutions are tested on silicon wafers for their consequent comparison. The main purpose is to find optimal solution, which suits the requirements of a time stability and start-up velocity of passivation, reproducibility of the measurements and a possibility of a perfect cleaning of a passivating solution remains from a silicon surface, so that the parameters of a measured silicon wafer will not worsen and there will not be any contamination of the other wafers series in the production after a repetitive return of the measured wafer into the production process. The cleaning process itself is also a subject of a development.

Anglický abstrakt

For the measurement of the minority carrier bulk-lifetime the characterization method MW-PCD is used, where the result of measurement is the effective carrier lifetime, which is very dependent on the surface recombination velocity and therefore on the quality of a silicon surface passivation. This work deals with an examination of a different solution types for the chemical passivation of a silicon surface. Various solutions are tested on silicon wafers for their consequent comparison. The main purpose is to find optimal solution, which suits the requirements of a time stability and start-up velocity of passivation, reproducibility of the measurements and a possibility of a perfect cleaning of a passivating solution remains from a silicon surface, so that the parameters of a measured silicon wafer will not worsen and there will not be any contamination of the other wafers series in the production after a repetitive return of the measured wafer into the production process. The cleaning process itself is also a subject of a development.

Klíčová slova

quinhydrone, chemical passivation

Klíčová slova v angličtině

quinhydrone, chemical passivation

Autoři

SOLČANSKÝ, M.; VANĚK, J.; PORUBA, A.

Rok RIV

2013

Vydáno

27.04.2012

Nakladatel

HINDAWI PUBLISHING CORPORATION

Místo

NEW YORK

ISSN

1110-662X

Periodikum

INTERNATIONAL JOURNAL OF PHOTOENERGY

Svazek

2012

Číslo

2012

Stát

Egyptská arabská republika

Strany od

1

Strany do

4

Strany počet

4

URL

http://www.hindawi.com/journals/ijp/2012/732647/

BibTex

@article{BUT91628,
  author="Marek {Solčanský} and Jiří {Vaněk} and Aleš {Poruba}",
  title="Quinhydrone Chemical Passivation of a Silicon Surface for Minority Carrier Bulk-Lifetime Measurements",
  journal="INTERNATIONAL JOURNAL OF PHOTOENERGY",
  year="2012",
  volume="2012",
  number="2012",
  pages="1--4",
  issn="1110-662X",
  url="http://www.hindawi.com/journals/ijp/2012/732647/"
}