Detail publikace

Morphology and structural investigation of silicon carbide layers formated by sublimation

DALLAEVA, D.

Originální název

Morphology and structural investigation of silicon carbide layers formated by sublimation

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

Thin films of silicon carbide (SiC) were grown by sublimation epitaxy in vacuum on the 6H-SiC substrates. Structural properties of the initial substrates and the epilayers were studied by both electron-diffraction and X-ray diffraction methods. Electron-diffraction measurement gives the confirmation of the crystallinity of obtained layers. Experimental results show that a lattice per-fection of epilayer is equal to that of monocrystalline substrate. These results are also validated by scanning probe microscopy. So, this technology of fabrication of SiC thin films allows carry out a treatment of initial substrate defects in dependence of the process conditions.

Klíčová slova

structural properties, lattice perfection, epilayer, substrate, epitaxy

Autoři

DALLAEVA, D.

Rok RIV

2012

Vydáno

26. 4. 2012

Nakladatel

LITERA Brno, Tabor 43a, 612 00 Brno

Místo

Brno

ISBN

978-80-214-4462-1

Kniha

Proceedings of the 18th Conference STUDENT EEICT, vol. 3

Edice

vol.3

Strany od

239

Strany do

243

Strany počet

5

BibTex

@inproceedings{BUT91751,
  author="Dinara {Sobola}",
  title="Morphology and structural investigation of silicon carbide layers formated by sublimation",
  booktitle="Proceedings of the 18th Conference STUDENT EEICT, vol. 3",
  year="2012",
  series="vol.3",
  pages="239--243",
  publisher="LITERA Brno, Tabor 43a, 612 00 Brno",
  address="Brno",
  isbn="978-80-214-4462-1"
}