Detail publikace

Comparison of low-frequency noise and near-field optical spectroscopy of GaAs/AlGaAs single-quantum-well laser diodes

TOMÁNEK, P., DOBIS, P., BRÜSTLOVÁ, J.

Originální název

Comparison of low-frequency noise and near-field optical spectroscopy of GaAs/AlGaAs single-quantum-well laser diodes

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

Low-frequency electrical (laser diode output voltage) and near-field optical (light output power) fluctuation spectra and their cross-correlation factor have been investigated in GaAs/AlGaAs ridge waveguide laser diodes (LDs) with an active region containing a single quantum well (SQW) layer. The noise measurements were performed in the frequency range from 20 Hz to 20 kHz, at dc current ranging from fractions of the threshold current through to multiples of it. It is shown that in the lasing region the intensive Lorentzian-type electrical and optical noises with negative cross-correlation factor are characteristic for all samples regardless of technological treatments mentioned. This noise is due to charge carrier recombination processes in the interfaces between the active layer and the neighbouring layers.

Klíčová slova v angličtině

GaAs/AlGaAs single-quantum-well laser diodes, low-frequency noise,near-field optical spectroscopy,

Autoři

TOMÁNEK, P., DOBIS, P., BRÜSTLOVÁ, J.

Rok RIV

2003

Vydáno

15. 11. 2003

Nakladatel

Japan society of applied physics

Místo

Nara, Japan

Strany od

431

Strany do

434

Strany počet

4

BibTex

@inproceedings{BUT9385,
  author="Pavel {Tománek} and Pavel {Dobis} and Jitka {Brüstlová}",
  title="Comparison of low-frequency noise and near-field optical spectroscopy of GaAs/AlGaAs single-quantum-well laser diodes",
  booktitle="Atomically controlled surfaces, interfaces and nanostructures",
  year="2003",
  pages="4",
  publisher="Japan society of applied physics",
  address="Nara, Japan"
}