Detail publikace

HSPICE Statistical Modeling

RECMAN, M.

Originální název

HSPICE Statistical Modeling

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

Since the active elements are fabricated during a common sequence of processing steps, the values of these elements are correlated. The active devices such as bipolar transistors must be completely statistically characterized to account for the model parameter interdependencies. The contribution aims to give the fundamental steps included in HSPICE active device statistical characterization. The modeling of correlations between the crucial bipolar transistor model parameters for forward active region is presented. The synthesis of correlated model including saturation current, forward beta and Early-effect parameter is described.

Klíčová slova

circuit simulation, semiconductor device modeling, statistical model, transistor modeling

Autoři

RECMAN, M.

Rok RIV

2003

Vydáno

1. 1. 2003

Nakladatel

Novotný-Brno

Místo

Brno

ISBN

80-214-2461-3

Kniha

Proceedings of the Socrates Workshop 2003

Strany od

136

Strany do

142

Strany počet

7

BibTex

@inproceedings{BUT9405,
  author="Milan {Recman}",
  title="HSPICE Statistical Modeling",
  booktitle="Proceedings of the Socrates Workshop 2003",
  year="2003",
  pages="7",
  publisher="Novotný-Brno",
  address="Brno",
  isbn="80-214-2461-3"
}