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Detail publikace
ŠIKULA, J., DOBIS, P., PAVELKA, J., TACANO, M., HASHIGUCHI, S.
Originální název
Stochastic model for random tegraph signals in MOSFETS
Typ
článek ve sborníku ve WoS nebo Scopus
Jazyk
angličtina
Originální abstrakt
This paper investigates the emission and capture kinetics of random telegraf signals (RTS)in MOSFETs.The emphasis is on those signals showing a capture process which deviates from the standard Shockley-Read-Hall kinetics corresponding to a quadratic dependence on the number of carriers or on the drain current. A modified two-step approach is proposed which includes the capture of a carrier by trap located at the Si-SiO2 interface, folloved by a tunnelling process of the trapped carrier between the interface trap and a trap located in SiO2 layer.
Klíčová slova v angličtině
RTS noise, 1/f noise, MOSFET
Autoři
Rok RIV
2003
Vydáno
28. 11. 2003
Nakladatel
Meisei University Tokyo
Místo
Tokyo
Strany od
1
Strany do
4
Strany počet
BibTex
@inproceedings{BUT9409, author="Josef {Šikula} and Pavel {Dobis} and Jan {Pavelka} and Munecazu {Tacano} and Sumihisa {Hashiguchi}", title="Stochastic model for random tegraph signals in MOSFETS", booktitle="Proceeding of the 18th Forum of Science and Technology of Fluctuations", year="2003", pages="4", publisher="Meisei University Tokyo", address="Tokyo" }