Detail publikace

Stochastic model for random tegraph signals in MOSFETS

ŠIKULA, J., DOBIS, P., PAVELKA, J., TACANO, M., HASHIGUCHI, S.

Originální název

Stochastic model for random tegraph signals in MOSFETS

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

This paper investigates the emission and capture kinetics of random telegraf signals (RTS)in MOSFETs.The emphasis is on those signals showing a capture process which deviates from the standard Shockley-Read-Hall kinetics corresponding to a quadratic dependence on the number of carriers or on the drain current. A modified two-step approach is proposed which includes the capture of a carrier by trap located at the Si-SiO2 interface, folloved by a tunnelling process of the trapped carrier between the interface trap and a trap located in SiO2 layer.

Klíčová slova v angličtině

RTS noise, 1/f noise, MOSFET

Autoři

ŠIKULA, J., DOBIS, P., PAVELKA, J., TACANO, M., HASHIGUCHI, S.

Rok RIV

2003

Vydáno

28. 11. 2003

Nakladatel

Meisei University Tokyo

Místo

Tokyo

Strany od

1

Strany do

4

Strany počet

4

BibTex

@inproceedings{BUT9409,
  author="Josef {Šikula} and Pavel {Dobis} and Jan {Pavelka} and Munecazu {Tacano} and Sumihisa {Hashiguchi}",
  title="Stochastic model for random tegraph signals in MOSFETS",
  booktitle="Proceeding of the 18th Forum of Science and Technology of Fluctuations",
  year="2003",
  pages="4",
  publisher="Meisei University Tokyo",
  address="Tokyo"
}