Detail publikace
Analytical Computation of the Area of Pinched Hysteresis Loops of Ideal Mem-Elements
BIOLEK, Z. BIOLEK, D. BIOLKOVÁ, V.
Originální název
Analytical Computation of the Area of Pinched Hysteresis Loops of Ideal Mem-Elements
Typ
článek v časopise ve Web of Science, Jimp
Jazyk
angličtina
Originální abstrakt
The memory elements, memristor being the best known of them, driven by a periodical waveform exhibit the well-known pinched hysteresis loops. The hysteresis is caused by a memory effect which results in a nonzero area closed within the loop. This paper presents an analytical formula for the loop area. This formula is then applied to memory elements whose parameter-vs.-state maps are modeled in the polynomial form. The TiO2 memristor, a special subset of the above elements, is analyzed as a demonstration example.
Klíčová slova
Memory element, memristor, pinched hysteresis loop
Autoři
BIOLEK, Z.; BIOLEK, D.; BIOLKOVÁ, V.
Rok RIV
2013
Vydáno
1. 4. 2013
Nakladatel
Společnost pro radioeletronické inženýrství
Místo
Brno
ISSN
1210-2512
Periodikum
Radioengineering
Ročník
22
Číslo
1
Stát
Česká republika
Strany od
132
Strany do
135
Strany počet
4
BibTex
@article{BUT99802,
author="Zdeněk {Biolek} and Dalibor {Biolek} and Viera {Biolková}",
title="Analytical Computation of the Area of Pinched Hysteresis Loops of Ideal Mem-Elements",
journal="Radioengineering",
year="2013",
volume="22",
number="1",
pages="132--135",
issn="1210-2512"
}