Detail publikace

Metal-Semiconductor Junction Role in CdTe Detectors

GRMELA, L. ŠIK, O.

Originální název

Metal-Semiconductor Junction Role in CdTe Detectors

Typ

článek v časopise ve Web of Science, Jimp

Jazyk

angličtina

Originální abstrakt

We have performed noise spectroscopy and charge transport properties analysis of CdTe detectors. Two types of high volume detectors are compared: Low ohmic (based on low resistivity crystal material 70 Ohm cm) and semi-insulating ( 10^8 Ohmcm).The theoretical fundaments of contacts role in detector system are given. We observed high asymmetry of IV characteristics of the lowohmic sample between normal and reverse bias, showing improper quality of contacts preparation, caused by higher concentration of impurities in metal-semiconductor area. This finding is supported by the fact that the low frequency noise spectral density is proportional to applied voltage with exponent 2.7, which is higher than the theoretical value 2.The semi-insulating sample very good contact rectification effect symmetry and less additive noise to the detector system.

Klíčová slova

CdTe, transport characteristics, noise, contact quality

Autoři

GRMELA, L.; ŠIK, O.

Rok RIV

2013

Vydáno

12. 6. 2013

Nakladatel

Versita Publishing

Místo

Warsaw, Poland

ISSN

1335-8243

Periodikum

Acta Electrotechnica et Informatica

Ročník

13

Číslo

1

Stát

Slovenská republika

Strany od

22

Strany do

25

Strany počet

4

URL

http://www.degruyter.com/view/j/aeei.2013.13.issue-1/aeei-2013-0004/aeei-2013-0004.xml?format=INT

BibTex

@article{BUT100283,
  author="Lubomír {Grmela} and Ondřej {Šik}",
  title="Metal-Semiconductor Junction Role in CdTe Detectors",
  journal="Acta Electrotechnica et Informatica",
  year="2013",
  volume="13",
  number="1",
  pages="22--25",
  doi="10.2478/aeei-2013-0004",
  issn="1335-8243",
  url="http://www.degruyter.com/view/j/aeei.2013.13.issue-1/aeei-2013-0004/aeei-2013-0004.xml?format=INT"
}