Detail publikace

Diagnostics of GaAs Light Emitting Diode PN Junctions

KOKTAVÝ, P., KOKTAVÝ, B.

Originální název

Diagnostics of GaAs Light Emitting Diode PN Junctions

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

Tracing the bi-stable mechanism of reverse-biased junction conductivity can be used as an efficient tool to study PN junction inhomegeneities. This conductivity mechanism is usually accounted for in terms of crystalline lattice imperfections, dislocations, or metallic precipitates in the PN junction region. Two methods have been suggested for practical application: first, a tentative method to distinguish between the bi-stable and the multi-stable conductivity mechanism, and, second, a noise current rms value versus DC current plot based method.

Klíčová slova

PN Junction, LED Diode, Microplasma Noise

Autoři

KOKTAVÝ, P., KOKTAVÝ, B.

Rok RIV

2004

Vydáno

1. 1. 2004

Nakladatel

Kluwer Academic Publishers

Místo

Dordrecht, Belgium

ISBN

1-4020-2169-0

Kniha

Advanced Experimental Methods for Noise Research in Nanoscale Electronic Devices

Strany od

337

Strany do

344

Strany počet

8

BibTex

@inproceedings{BUT11707,
  author="Pavel {Koktavý} and Bohumil {Koktavý}",
  title="Diagnostics of GaAs Light Emitting Diode PN Junctions",
  booktitle="Advanced Experimental Methods for Noise Research in Nanoscale Electronic Devices",
  year="2004",
  pages="8",
  publisher="Kluwer Academic Publishers",
  address="Dordrecht, Belgium",
  isbn="1-4020-2169-0"
}