Přístupnostní navigace
E-přihláška
Vyhledávání Vyhledat Zavřít
Detail publikace
KOKTAVÝ, P., KOKTAVÝ, B.
Originální název
Diagnostics of GaAs Light Emitting Diode PN Junctions
Typ
článek ve sborníku ve WoS nebo Scopus
Jazyk
angličtina
Originální abstrakt
Tracing the bi-stable mechanism of reverse-biased junction conductivity can be used as an efficient tool to study PN junction inhomegeneities. This conductivity mechanism is usually accounted for in terms of crystalline lattice imperfections, dislocations, or metallic precipitates in the PN junction region. Two methods have been suggested for practical application: first, a tentative method to distinguish between the bi-stable and the multi-stable conductivity mechanism, and, second, a noise current rms value versus DC current plot based method.
Klíčová slova
PN Junction, LED Diode, Microplasma Noise
Autoři
Rok RIV
2004
Vydáno
1. 1. 2004
Nakladatel
Kluwer Academic Publishers
Místo
Dordrecht, Belgium
ISBN
1-4020-2169-0
Kniha
Advanced Experimental Methods for Noise Research in Nanoscale Electronic Devices
Strany od
337
Strany do
344
Strany počet
8
BibTex
@inproceedings{BUT11707, author="Pavel {Koktavý} and Bohumil {Koktavý}", title="Diagnostics of GaAs Light Emitting Diode PN Junctions", booktitle="Advanced Experimental Methods for Noise Research in Nanoscale Electronic Devices", year="2004", pages="8", publisher="Kluwer Academic Publishers", address="Dordrecht, Belgium", isbn="1-4020-2169-0" }