Detail publikace

TID in-situ measurement of temperature coefficient of various commercial voltage references

HOFMAN, J. HÁZE, J. SHARP, R.

Originální název

TID in-situ measurement of temperature coefficient of various commercial voltage references

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

this work presents results of a total ionising dose experiment, during which commercial voltage references were irradiated and measured under different bias conditions using an in-situ technique. The automated test system allowed the output voltage of the voltage references to be measured at various temperatures during irradiation to 100 krad(Si) and the subsequent 7 day period of annealing.The experimental results obtained allow improved insight into total ionising dose induced degradation of data acquisition systems for space applications. The results show that the temperature coefficient of selected commercial voltage references significantly changes (increases) with TID. Therefore these devices can be used for data acquisition systems only on board LEO missions like CubeSats, which are typically exposed to a limited radiation dose.

Klíčová slova

voltage reference, bandgap, buried Zener diode, data acquisition, A/D converter, TID test, in-situ, temperature coefficient, automated test equipment, test methods

Autoři

HOFMAN, J.; HÁZE, J.; SHARP, R.

Vydáno

4. 10. 2017

Nakladatel

IEEE

ISBN

9781509002337

Kniha

Radecs 2017 proceedings

Strany od

459

Strany do

462

Strany počet

4

URL

https://ieeexplore.ieee.org/document/8093206

BibTex

@inproceedings{BUT140351,
  author="Jiří {Hofman} and Jiří {Háze} and Richard {Sharp}",
  title="TID in-situ measurement of temperature coefficient of various commercial voltage references",
  booktitle="Radecs 2017 proceedings",
  year="2017",
  pages="459--462",
  publisher="IEEE",
  doi="10.1109/RADECS.2017.8696249",
  isbn="9781509002337",
  url="https://ieeexplore.ieee.org/document/8093206"
}