Detail publikace

Protection Against PID Degradation at Photovoltaic Cell Level

HYLSKÝ, J. STRACHALA, D. ČUDEK, P. VANĚK, J.

Originální název

Protection Against PID Degradation at Photovoltaic Cell Level

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

Nowadays, we find many scientific papers dealing with the potential induced degradation, in which authors attempt to achieve PID resistive photovoltaic cells. This work deals with the electrical properties of the newly created P-type photovoltaic cell. The IV-characteristics and external quantum efficiency of the newly created and reference samples are compared. To verify the resistivity of the newly created photovoltaic cell against PID, both samples were artificially degraded

Klíčová slova

Potential Induced Degradation

Autoři

HYLSKÝ, J.; STRACHALA, D.; ČUDEK, P.; VANĚK, J.

Vydáno

9. 11. 2018

Nakladatel

ECS Transaction

Místo

Brno

ISBN

978-1-60768-864-8

Kniha

ECS Transactions

Edice

87

Číslo edice

1

ISSN

1938-5862

Periodikum

ECS Transactions

Ročník

87

Číslo

1

Stát

Spojené státy americké

Strany od

221

Strany do

225

Strany počet

5

URL

https://iopscience.iop.org/article/10.1149/08701.0221ecst/pdf

BibTex

@inproceedings{BUT150479,
  author="Josef {Hylský} and Dávid {Strachala} and Pavel {Čudek} and Jiří {Vaněk}",
  title="Protection Against PID Degradation at Photovoltaic Cell Level",
  booktitle="ECS Transactions",
  year="2018",
  series="87",
  journal="ECS Transactions",
  volume="87",
  number="1",
  pages="221--225",
  publisher="ECS Transaction",
  address="Brno",
  doi="10.1149/08701.0221ecst",
  isbn="978-1-60768-864-8",
  issn="1938-5862",
  url="https://iopscience.iop.org/article/10.1149/08701.0221ecst/pdf"
}