Detail publikace

(V)TEAM for SPICE Simulation of Memristive Devices With Improved Numerical Performance

BIOLEK, D. KOLKA, Z. BIOLKOVÁ, V. BIOLEK, Z. KVATINSKY, S.

Originální název

(V)TEAM for SPICE Simulation of Memristive Devices With Improved Numerical Performance

Typ

článek v časopise ve Web of Science, Jimp

Jazyk

angličtina

Originální abstrakt

The paper introduces a set of models of memristive devices for a reliable, accurate and fast analysis of large networks in the SPICE (Simulation Program with Integrated Circuit Emphasis) environment. The modeling starts from the recently introduced TEAM (ThrEshold Adaptive Memristor Model) and VTEAM (Voltage ThrEshold Adaptive Memristor Model). A number of improvements are made towards the stick effect elimination and other numerical renements to make the analysis of large networks fast and accurate. A set of models are proposed that utilize the synergy of several techniques such as window asymmetrization, integration with saturation, state equation preprocessing, scaling, and smoothing. The performance of models is tested in Cadence PSPICE 17.2 and particularly in HSPICE v2017, the latter on a large-scale CNN (Cellular Nonlinear Network) for detecting edges of binary images. The simulations manifest the usability of developed models for fast and reliable operation in networks containing more than one million nodes.

Klíčová slova

Memristor; VTEAM; window function; stick effect; SPICE; cellular nonlinear network

Autoři

BIOLEK, D.; KOLKA, Z.; BIOLKOVÁ, V.; BIOLEK, Z.; KVATINSKY, S.

Vydáno

25. 2. 2021

Nakladatel

IEEE

Místo

USA

ISSN

2169-3536

Periodikum

IEEE Access

Ročník

9

Číslo

2

Stát

Spojené státy americké

Strany od

30242

Strany do

30255

Strany počet

14

URL

https://ieeexplore.ieee.org/document/9354151

Plný text v Digitální knihovně

http://hdl.handle.net/11012/196418

BibTex

@article{BUT170268,
  author="Dalibor {Biolek} and Zdeněk {Kolka} and Viera {Biolková} and Zdeněk {Biolek} and Shahar {Kvatinsky}",
  title="(V)TEAM for SPICE Simulation of Memristive Devices With Improved Numerical Performance",
  journal="IEEE Access",
  year="2021",
  volume="9",
  number="2",
  pages="30242--30255",
  doi="10.1109/ACCESS.2021.3059241",
  issn="2169-3536",
  url="https://ieeexplore.ieee.org/document/9354151"
}