Detail publikace

Electron Cyclotron Resonance Plasma Etching of n-SiC and Evaluation of Ni/n-SiC Contacts by Current Noise Measurements

TANUMA, N., YASUKAWA, S., YOKOKURA, S., HASHIGUCHI, S., ŠIKULA, J., MATSUI, T., TACANO, M.

Originální název

Electron Cyclotron Resonance Plasma Etching of n-SiC and Evaluation of Ni/n-SiC Contacts by Current Noise Measurements

Typ

článek v časopise - ostatní, Jost

Jazyk

angličtina

Originální abstrakt

The Si surface of the wide band semiconductor n-SiC is plasma etched in order to smooth the substrates. Low frequency current noise characteristics are investigated in wide temperature range. Current noise increases with sample current and the number of electrons in active region is estimated from resistance and Hooge parameter.

Klíčová slova v angličtině

Noise, SiC, Ni/n-SiC Contact

Autoři

TANUMA, N., YASUKAWA, S., YOKOKURA, S., HASHIGUCHI, S., ŠIKULA, J., MATSUI, T., TACANO, M.

Rok RIV

2001

Vydáno

1. 1. 2001

ISSN

0021-4922

Periodikum

Japanese Journal of Applied Physics

Ročník

40

Číslo

6A

Stát

Japonsko

Strany od

3979

Strany do

3984

Strany počet

6

BibTex

@{BUT70754
}