Detail publikace

Photoluminescence scanning near-field optical microscopy in GaAlAs/GaAs quantum wells

OTEVŘELOVÁ, D. GRMELA, L. TOMÁNEK, P. BRÜSTLOVÁ, J.

Originální název

Photoluminescence scanning near-field optical microscopy in GaAlAs/GaAs quantum wells

Typ

článek v časopise ve Web of Science, Jimp

Jazyk

angličtina

Originální abstrakt

Submicron spatial resolution photoluminescence is used to assess radiative efficiency and spatial uniformity of GaAlAs/GaAs heterojunctions. Room temperature photo-luminescence of multiple GaAlAs wells with GaAs barriers was measured as a function of a facet of device perpendicular to the layer structure The scanning near-field optical microscope is applied for the diagnostics of the defects in semiconductor devices for instance in a multiple quantum well grown by molecular beam epitaxy. Our high resolution studies reveal that the radiative recombination for the GaAlAs quantum well is approx. 50 times more efficient than for the underlying GaAs film. The comparison of the Far-field and Near-field characteristics of measured quantities are also given.

Klíčová slova

Local photoluminescence, scanning near-field optical microscopy, quantum well, superresolution

Autoři

OTEVŘELOVÁ, D.; GRMELA, L.; TOMÁNEK, P.; BRÜSTLOVÁ, J.

Rok RIV

2003

Vydáno

1. 9. 2003

Nakladatel

SPIE

Místo

Bellingham, USA

ISSN

0277-786X

Periodikum

Proceedings of SPIE

Ročník

5036

Číslo

5036

Stát

Spojené státy americké

Strany od

640

Strany do

644

Strany počet

5

BibTex

@article{BUT41429,
  author="Dana {Otevřelová} and Lubomír {Grmela} and Pavel {Tománek} and Jitka {Brüstlová}",
  title="Photoluminescence scanning near-field optical microscopy in GaAlAs/GaAs quantum wells",
  journal="Proceedings of SPIE",
  year="2003",
  volume="5036",
  number="5036",
  pages="640--644",
  issn="0277-786X"
}