Detail publikace

Low Frequency Noise of Tantalum Capacitors

ŠIKULA, J., HLÁVKA, J., PAVELKA, J., SEDLÁKOVÁ, V., GRMELA, L., TACANO, M., HASHIGUCHI, S.

Originální název

Low Frequency Noise of Tantalum Capacitors

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

A low frequency noise and charge carriers transport mechanism analysis was performed on tantalum capcitors in order to characterise their quality and reliabilityThe moedl of ta - ta2O5 - MnO2 MIS structure was used to give physical interpretation of VA characteristic noth in normal and reverse modes. The self-healing process based on high temperature MnO2- Mn2O3 transformation was studied and its kinetic determined on the basis of noise spectral density changes.

Klíčová slova v angličtině

Noise, tantalum capcitors, self-healing, reliability

Autoři

ŠIKULA, J., HLÁVKA, J., PAVELKA, J., SEDLÁKOVÁ, V., GRMELA, L., TACANO, M., HASHIGUCHI, S.

Rok RIV

2001

Vydáno

1. 1. 2001

Nakladatel

Electronic Components Institute Internationale Ltd.

Místo

Kodaň, Dánsko

Strany od

81

Strany do

84

Strany počet

4

BibTex

@{BUT70480
}